Results 61 to 70 of about 322 (148)

The impact of process optimisation on planar THz-Schottky device reliability [PDF]

open access: yes, 2004
The technological complexity as well as space-application quality standards require sophisticated process control and optimization for reliability improvement of planar THz-Schottky devices.
HARTNAGEL, H. L.   +11 more
core   +1 more source

Method For Determining A Transmission Line Pulse Shape That Produces Equivalent Results To Human Body Model Testing Methods

open access: yes, 2000
Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip damage each year. This paper focuses on an ESD event resulting from the charge being transferred from a human body to an integrated circuit (i.e., called the ...
Croft, G. D., Hoque, M. A., Lee, J. C.
core  

Investigation Of Turn-On Speeds Of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

open access: yes, 2008
As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits.
Ding, K. B.   +4 more
core   +1 more source

MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application. [PDF]

open access: yesMicromachines (Basel), 2023
Chen R   +8 more
europepmc   +1 more source

Graphene-Based ESD Protection for Future ICs. [PDF]

open access: yesNanomaterials (Basel), 2023
Li C   +5 more
europepmc   +1 more source

Ion trap and release dynamics enables nonintrusive tactile augmentation in monolithic sensory neuron. [PDF]

open access: yesSci Adv, 2023
Kweon H   +10 more
europepmc   +1 more source

Publication Only

open access: yes
HemaSphere, Volume 9, Issue S1, June 2025.
wiley   +1 more source

Zuverlässigkeitsstudien an Höchstfrequenzbauelementen mit gepulsten Techniken (TLP-Methode)

open access: yes, 2004
Diese Arbeit beschreibt die gezielte Anregung zuverlässigkeitsrelevanter Degradations- und Defektmechanismen bei III/V Höchstfrequenzbauelementen (InGaP/GaAs Heterostruktur Bipolartransistor, Pt/GaAs THz-Schottkydiode) unter Verwendung elektrischer Pulse
Mottet, Bastian
core  

Systematic Transient Characterization of Graphene Interconnects for on-Chip ESD Protection

open access: yes, 2016
Both novel ESD structures and robust ESD interconnects are critical to on-chip ESD protection designs [1-3], which are characterized by transient transmission line pulse (TLP) testing for human body model (HBM).
Cheng, Yuhua   +19 more
core   +1 more source

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