Results 71 to 80 of about 322 (148)

A Novel Bidirectional AlGaN/GaN ESD Protection Diode. [PDF]

Micromachines (Basel), 2022
Yao B, Shi Y, Wang H, Xu X, Chen Y, He Z, Xiao Q, Wang L, Lu G, Li H, Huang Y, Zhang B.   +11 more
europepmc   +1 more source

Study of GaN HEMT Behavior Subjected to TLP and VFTLP ESD Measurements

, 2019
In this work the Electrostatic Discharge (ESD) behavior of GaN - on - Si power devices is investigated using on-wafer transmission line pulse (TLP) and very fast transmission line pulse (VFTLP).
Stoll, Nicholas
core  

FT-EPR with a nonresonant probe: use of a truncated coaxial line

, 1998
A truncated transmission line probe (TLP) has been utilized to excite and detect time domain responses after pulsed excitation in electron paramagnetic resonance (EPR) spectroscopic experiments in the frequency range 200-400 MHz.
Murugesan, R., Subramanian, Sankaran, Mitchell, James B., Rubinson, Kenneth A., Cook, John A., Krishna, Murali C.   +5 more
core   +1 more source

Characterizing phase switching structures for ESD protection

, 2011
We propose a non-traditional nano phase switching ESD protection mechanism and systematic characterization of a set of prototype nano crossbar phase switching ESD structures.
Shi, Zitao, Cheng, Yuhua, Wang, Li, Wang, Albert, Wang, Xin, Zhang, Gary, Lin Lin, Zhang, Chen, Zitao Shi, Albert Wang, Gary Zhang, Jian Liu, Xin Wang, Yuhua Cheng, Ru Huang, Chen Zhang, Lin, Lin, Zhao, B., Li Wang, Zhang, Lijie, B. Zhao, Liu, Jian, Huang, Ru, Lijie Zhang   +23 more
core   +1 more source

Development of 3D Wafer Level Hermetic Packaging with Through Glass Vias (TGVs) and Transient Liquid Phase Bonding Technology for RF Filter. [PDF]

Sensors (Basel), 2022
Chen Z, Yu D, Zhong Y.
europepmc   +1 more source

A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability. [PDF]

Micromachines (Basel), 2022
He Z, Shi Y, Huang Y, Chen Y, Wang H, Wang L, Lu G, Xin Y.   +7 more
europepmc   +1 more source

A False Trigger-Strengthened and Area-Saving Power-Rail Clamp Circuit with High ESD Performance. [PDF]

Micromachines (Basel), 2023
Ma B, Chen S, Wang S, Qian L, Han Z, Huang W, Fu X, Liu H.   +7 more
europepmc   +1 more source

Characterization of Dielectric Breakdown and Lifetime Analysis for Silicon Nitride Metal-Insulator-Metal Capacitors under Electrostatic Discharge Stresses

, 2018
Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN integrated circuits and integrated passive devices (IPD).
Li, Hang, Miao, Meng, Liang, Wei, Hobie Yun, Wei Liang, Yun, Hobie, Aihua Dong, Meng Miao, Dong, Aihua, Hang Li, Kalpathy B. Sundaram   +10 more
core   +1 more source

Characterization of a PCB Based Pressure Sensor and Its Joining Methods for the Metal Membrane. [PDF]

Sensors (Basel), 2021
Schwenck A, Grözinger T, Günther T, Schumacher A, Schuhmacher D, Werum K, Zimmermann A.   +6 more
europepmc   +1 more source

Characterization Of Esd Protection Devices Under Total Ionizing Dose Irradiation

, 2017
In this paper, the total ionizing dose effects on electrostatic discharge (ESD) protection devices are investigated. Irradiation is conducted with 1.5 MeV He+ from a RPEA 4.0 MV Dynamitron accelerator, and the Barth 4002 transmission line pulse (TLP ...
Klebanov, Maxim, Liang, Wei, Kuo, Chung Chen, Alexandrou, Kostas, Kymissis, Ioannis   +4 more
core   +1 more source