Results 181 to 190 of about 606,110 (277)
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Optimization of Negative-Capacitance Vertical-Tunnel FET (NCVT-FET)
IEEE Transactions on Electron Devices, 2020We investigate the GaAs0.51Sb0.49/In0.53Ga0.47As negative-capacitance vertical-tunnel FET (NCVT-FET) to maximize its vertical tunneling over the corner tunneling. Negative capacitance enhances vertical tunneling more significantly than corner tunneling due to the amplified vertical electric field.
Vita Pi-Ho Hu +3 more
openaire +2 more sources
IEEE transactions on nanotechnology, 2023
In this work, a single transistor (1-T) leaky-integrate-and-fire neuron based on band to band tunneling mechanism is proposed with significant improvement in energy consumption and integration density.
M. Khanday +3 more
semanticscholar +1 more source
In this work, a single transistor (1-T) leaky-integrate-and-fire neuron based on band to band tunneling mechanism is proposed with significant improvement in energy consumption and integration density.
M. Khanday +3 more
semanticscholar +1 more source
A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon
Nature Electronics, 2021Clarissa Convertino +2 more
exaly +2 more sources
Journal of the Institution of Electronics and Telecommunication Engineers, 2023
This work reports a comparative analysis of different cavity positions in Charge Plasma-based Tunnel Field Effect Transistor (CP TFET) for Biosensor Application. In CP TFET, we have created a nanogap cavity at three different positions i.e.
Ashok Kumar, S. Kale
semanticscholar +1 more source
This work reports a comparative analysis of different cavity positions in Charge Plasma-based Tunnel Field Effect Transistor (CP TFET) for Biosensor Application. In CP TFET, we have created a nanogap cavity at three different positions i.e.
Ashok Kumar, S. Kale
semanticscholar +1 more source
IEEE Transactions on Nanobioscience, 2022
This work reports a biosensor based on the dual cavity dielectric modulated ferroelectric charge plasma Tunnel FET (FE-CP-TFET) with enhanced sensitivity.
Shradhya Singh +3 more
semanticscholar +1 more source
This work reports a biosensor based on the dual cavity dielectric modulated ferroelectric charge plasma Tunnel FET (FE-CP-TFET) with enhanced sensitivity.
Shradhya Singh +3 more
semanticscholar +1 more source
A Review on Emerging Tunnel FET Structures for High-speed and Low-power Circuit Applications
2023 IEEE Devices for Integrated Circuit (DevIC), 2023Tunnel FET is found to be a prominent candidate to address the various issues like short channel effects, thermionic limitation, which are dominant in MOSFET.
C. Pandey +5 more
semanticscholar +1 more source
IEEE Transactions on Nanobioscience, 2022
In this paper, a novel structure of double gate tunnel FET has been proposed and simulated for biosensing applications. The device uses III-V compound semiconductors and an n+ doped pocket at the source channel junction.
Shazia Rashid +3 more
semanticscholar +1 more source
In this paper, a novel structure of double gate tunnel FET has been proposed and simulated for biosensing applications. The device uses III-V compound semiconductors and an n+ doped pocket at the source channel junction.
Shazia Rashid +3 more
semanticscholar +1 more source
Dielectrically Modulated Single and Double Gate Tunnel FET Based Biosensors for Enhanced Sensitivity
IEEE Sensors Journal, 2021The paper explores the comparative biosensing analysis of single Gate (SG) and double Gate (DG) Extended Source Tunnel FET (ESTFET). The dielectric modulation technique has been incorporated for both the proposed biosensors with increased capture area by
J. Talukdar +2 more
semanticscholar +1 more source
Multiplexed Silicon Nanowire Tunnel FET-Based Biosensors With Optimized Multi-Sensing Currents
IEEE Sensors Journal, 2021In this study, silicon nanowire (SiNW) FET-based and SiNW tunnel FET (TFET)-based biosensors are co-integrated with CMOS circuits by using top-down approached and CMOS-compatible back-end process simultaneously.
Sihyun Kim +8 more
semanticscholar +1 more source
Extended-Source Double-Gate Tunnel FET With Improved DC and Analog/RF Performance
IEEE Transactions on Electron Devices, 2020In this article, we propose an extended-source double-gate tunnel field-effect transistor (ESDG-TFET) to enhance the dc and analog/RF performance. The source of an ESDG-TFET is extended into channel to increase the line and point tunneling in the device ...
T. Joshi, Y. Singh, Balraj Singh
semanticscholar +1 more source