Results 191 to 200 of about 606,110 (277)
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ECS Journal of Solid State Science and Technology, 2022
A novel structure of GAA vertical TFET (GAA-VTFET) is proposed and investigated with the help of 3D TCAD simulator. It is found that GAA-VTFET offers much improvement in various DC parameters like ION, IOFF, SSAVG, and turn-on voltage (VT) compared to ...
K. Karthik, C. Pandey
semanticscholar +1 more source
A novel structure of GAA vertical TFET (GAA-VTFET) is proposed and investigated with the help of 3D TCAD simulator. It is found that GAA-VTFET offers much improvement in various DC parameters like ION, IOFF, SSAVG, and turn-on voltage (VT) compared to ...
K. Karthik, C. Pandey
semanticscholar +1 more source
A Tunnel Dielectric-Based Tunnel FET
IEEE Electron Device Letters, 2015In this letter, for the first time, we proposed and demonstrated a novel tunnel dielectric-based tunnel FET (TD-TFET). Instead of using semiconductor band-to-band tunneling currents to form drive currents as in normal TFET, tunneling currents through ultrathin dielectric form the drive currents in the TD-TFET. The fabricated devices have achieved 55-mV/
Zhijiong Luo +3 more
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2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2), 2017
The impact of technology scaling vividly increases the susceptibility of semiconductor devices to radiation. Single Event Transient (SET) in a device is a process in which the generation of charge takes place when a single particle passes through a sensitive node in the device. This paper deals with the performance analysis of three different tunneling
R. Gowri Manohari +2 more
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The impact of technology scaling vividly increases the susceptibility of semiconductor devices to radiation. Single Event Transient (SET) in a device is a process in which the generation of charge takes place when a single particle passes through a sensitive node in the device. This paper deals with the performance analysis of three different tunneling
R. Gowri Manohari +2 more
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ECS Meeting Abstracts, 2008
Abstract not Available.
Ignaz Eisele, Martin Schlosser
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Abstract not Available.
Ignaz Eisele, Martin Schlosser
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Resonant interband tunneling FET
IEEE Electron Device Letters, 1995A lateral three-terminal Resonant Interband Tunneling Field Effect Transistor (RITFET) has been fabricated. It consists of a resonant interband tunnel diode (RITD) built using the GaSb-AlSb-InAs material system and a pseudomorphic InGaAs channel FET in which the current is controlled by a Schottky gate.
S. Tehrani +5 more
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Innovative tunnel FET architectures
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018We propose three innovative SOI Tunnel FET architectures. They are evaluated and compared with a standard TFET structure using Sentaurus TCAD. The extension of the source (anode) at the bottom of the body generates vertical band-to-band tunneling with a very steep slope and higher ION than lateral tunneling, but only for gate lengths longer than 100 nm.
Llorente, Carlos Diaz +7 more
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Tunnel FET based refresh-free-DRAM
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017, 2017A refresh free and scalable ultimate DRAM (uDRAM) bitcell and architecture is proposed for embedded application. uDRAM 1T1C bitcell is designed using access Tunnel FETs. Proposed design is able to store the data statically during retention eliminating the need for refresh.
Gupta, Navneet +4 more
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IEEE Sensors Journal, 2019
In this paper, we have proposed a charge plasma-based doping less double gated tunnel FET (DLDGTFET)-based biosensor using dielectric modulation with a cavity introduced at the source side for the label free sensing of the biomolecules.
S. Anand +3 more
semanticscholar +1 more source
In this paper, we have proposed a charge plasma-based doping less double gated tunnel FET (DLDGTFET)-based biosensor using dielectric modulation with a cavity introduced at the source side for the label free sensing of the biomolecules.
S. Anand +3 more
semanticscholar +1 more source
A Novel Tunnel Oxide Based Tunnel FET
ECS Transactions, 2011In this work, we propose a novel tunnel oxide based Tunnel FET. This novel Tunnel FET can achieve high drive currents, low SS, low off currents and many other superb device characteristics. From device simulation, this novel device can obtain drive currents 100x higher than that of a conventional Tunnel FET. This novel device also can realize SS as low
Hefei Wang +5 more
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Schottky Tunneling Effects in a Tunnel FET
IEEE Transactions on Electron Devices, 2017Tunnel FETs (TFETs) have attracted a great deal of attention due to their steep subthreshold swing (SS) of less than 60 mV/dec, which overcomes the theoretical constraint imposed by the thermal limit in a conventional inversion-mode (IM) FET. Based on its advantages as a short-channel device with low stand-by power consumption, TFETs shows promise to ...
Jae Hur +3 more
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