Results 161 to 170 of about 125,060 (320)
TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor. [PDF]
Aishwarya K, Lakshmi B.
europepmc +1 more source
SWIR donor polymer TQ‐3T allows photomultiplication in OPD in 1:1 ratio with NFA Y6, achieving EQEs > 1100% at ‐10 V. Microseconds response times are retained, amongst the lowest for photomultiplication. As proof of concept, we demonstrate ultrathin and flexible PM‐OPDs based on our TQ‐3T:Y6 as a flexible pulse oximeter as well as a conformable image ...
Matilde Brunetta +23 more
wiley +1 more source
Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor. [PDF]
Yu J +7 more
europepmc +1 more source
Flexible Memory: Progress, Challenges, and Opportunities
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source
Flexible tactile sensors have considerable potential for broad application in healthcare monitoring, human–machine interfaces, and bioinspired robotics. This review explores recent progress in device design, performance optimization, and intelligent applications. It highlights how AI algorithms enhance environmental adaptability and perception accuracy
Siyuan Wang +3 more
wiley +1 more source
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection. [PDF]
Tamersit K +3 more
europepmc +1 more source
A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo +4 more
wiley +1 more source
Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang +4 more
wiley +1 more source
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source

