Results 171 to 180 of about 125,060 (320)

Ferroelectric Tunnel Junction Memristor Crossbar Array with Annealing Optimization for In‐Memory Computing

Advanced Intelligent Systems, EarlyView.
A 48 × 48 ferroelectric tunnel junction (FTJ) crossbar array is fabricated and optimized through postmetallization annealing, enabling stable polarization switching and reliable multilevel conductance programming. Half‐bias operation, accurate vector–matrix multiplication with less than 1% error, and CIFAR‐10 image classification with near‐software ...
Sangwook Youn, Hwiho Hwang, Hyungjin Kim
wiley   +1 more source

Hybrid Convolutional Neural Network‐Analytical Model for Prediction of Line Edge Roughness‐Induced Performance Variations in Fin‐Shaped Field‐Effect Transistor Devices and SRAM

Advanced Intelligent Systems, EarlyView.
This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim, Myongjin Kim, Changwoo Han, Hyoung Won Baac, Changhwan Shin   +4 more
wiley   +1 more source

A Fully Integrated Analog Processing‐in‐Memory System Based on Charge‐Trap Flash Synapse Arrays and Successive Integration‐and‐Rescaling Neurons

Advanced Intelligent Systems, EarlyView.
A fully integrated analog processing‐in‐memory system is demonstrated, combining charge‐trap flash synapse arrays with a successive integration‐and‐rescaling neuron circuit. The architecture performs bit‐sliced analog accumulation with high linearity and low power, achieving efficient and scalable analog in‐memory computing and bridging device‐level ...
Sojoong Kim, Yeonwoo Kim, Woo Young Choi, Minsuk Koo, Yoon Kim   +4 more
wiley   +1 more source

Advances in Regulating Strategies and Applications of Ferroelectric Materials

Advanced Physics Research, EarlyView.
To meet the demand for precise control of performance in nanoelectronic devices, this paper systematically reviews the latest advances in controlling ferroelectric properties through strategies such as external field modulation, low‐dimensional confinement, interface engineering, and topological structure design.
Jianying Ji, Cong Liu, Dan Luo, Zhou Li
wiley   +1 more source

Advances in Triboelectric Nanogenerators With Rotating Structure

Carbon Energy, EarlyView.
The rotating TENG has been widely studied for its superiorities of simple structure, high efficiency, and stable output. This review introduced the four different principles of rotating TENG and offered a thorough summary for performance and application research through three‐level classification. Importantly, the current existing problems, challenges,
Chuguo Zhang, Chunxu Xue, Yutong Chen, Yujie Qiang, Seeram Ramakrishna   +4 more
wiley   +1 more source

A Review of Black Phosphorus‐Based Materials: From Preparation Strategies to Characterization Techniques

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
The structure, properties, preparation methods, and characterization techniques of BP. As a typical 2D layered material, black phosphorus (BP) demonstrates exceptional promise in various fields, particularly in energy storage for alkali metal‐ion batteries. However, its distinctive structure and properties, together with the compositional complexity of
Yunqing Wang, Jinzhi Lyu, Yongxiang Li, Yubing Wang, Xiangming Cui, Jianan Wang, Banglong Wan, Wei Yan   +7 more
wiley   +1 more source

Optoelectronic synapses based on two‐dimensional transition metal dichalcogenides for neuromorphic applications

InfoScience, EarlyView.
This review first introduces the fundamental concepts of artificial synapses and synaptic plasticity, then discusses the device structures and operation mechanisms of optoelectronic synapses based on two‐dimensional transition metal dichalcogenides, highlights their applications in neuromorphic vision systems and computing, and concludes with key ...
Xiaona Sun, Yifan Hu, Chengbao Jiang, Shengxue Yang   +3 more
wiley   +1 more source

Temperature‐robust exchange bias and spin‐orbit torque switching in van der Waals heterostructure

InfoMat, EarlyView.
Exchange bias (EB) in ferromagnetic/antiferromagnetic materials enables high‐density spintronic devices. A Fe3GaTe2/NiPS3 heterostructure exhibits EB up to 150 K, with spin orbit torque switching observed in both stacking orders. Interface layer effects induce net magnetism and magnetization flipping via Fe3GaTe2 domains, with strong interlayer ...
Obaid Iqbal, Zahir Muhammad, Wajid Ali, Fuzhou Wang, Md Shafayat Hossain, Azizur Rahman, Saleh S. Alarfaji, Yue Zhang, Xiaoyang Lin, M. Zahid Hasan, Weisheng Zhao   +10 more
wiley   +1 more source

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

InfoMat, EarlyView.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang   +11 more
wiley   +1 more source