Results 211 to 220 of about 125,060 (320)

Advancing the Frontiers of HfO₂-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]

Adv Mater
Zhou Z, Li L, Feng Y, Wang X, Zheng Z, Jiao L, Zheng H, Shi Y, Ang KW, Gong X.   +9 more
europepmc   +1 more source

Advancing Single‐Walled Carbon Nanotubes toward Next‐Generation Electronic Materials: The Critical Roles of Purity and Processability

Small Methods, EarlyView.
Single‐walled carbon nanotubes (SWNTs) are promising for a wide range of applications. In particular, their exceptional electrical conductivity positions them as potential alternatives to traditional metal conductors. This review identifies the key mechanisms governing their conductivity within composites and proposes practical pathways for translating
Xiao Yu, Alex Adronov
wiley   +1 more source

Nature of 2D XY antiferromagnetism in a van der Waals monolayer. [PDF]

Nat Commun
Cheon CY, Multian V, Watanabe K, Taniguchi T, Morpurgo AF, Lebedev D.   +5 more
europepmc   +1 more source

Carrier Mapping in Sub‐2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy

Small Methods, EarlyView.
Within this work, advancements in scanning spreading resistance microscopy (SSRM) allow charge carrier mapping within 5.5 nm‐thick nanosheet channels. Devices subjected to rapid thermal annealing at 950°C show ∼ 5 nm enhanced phosphorus diffusion, with profiles in close agreement with semi‐atomistic process simulations.
Andrea Pondini, Pierre Eyben, Lennaert Wouters, Albert Minj, Thomas Hantschel, Philippe Matagne, Jérôme Mitard, Anne Verhulst   +7 more
wiley   +1 more source

Emerging Electrolyte-Gated Transistors: Materials, Configuration and External Field Regulation. [PDF]

Materials (Basel)
Tang D, Deng W, Yan X, Gaumet JJ, Luo W.
europepmc   +1 more source

A Charge-Coupled Phototransistor Enabling Synchronous Dynamic and Static Image Detection. [PDF]

Adv Mater
Feng S, Han R, Liu C, Jia D, Zhang G, Zhu X, Li B, Sun Y, Li C, Gao Y, Cheng T, Han Z, Cheng HM, Sun DM.   +13 more
europepmc   +1 more source

The Iontronic Quantum Dot. [PDF]

Nano Lett
Prete D, Demontis V, Zannier V, Sorba L, Beltram F, Rossella F.   +5 more
europepmc   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon, Dong Ho Lee, Seyoung Oh, Jongwon Yoon, Hyo‐Bae Kim, Ji‐Hoon Ahn, Woojin Park, Han Seul Kim, Byungjin Cho   +8 more
wiley   +1 more source

Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions. [PDF]

Sci Rep
Cherik IC, Mohammadi S, Hurley PK, Ansari L, Gity F.   +4 more
europepmc   +1 more source

Device Integration Technology for Practical Flexible Electronics Systems

Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.
Flexible device integration technologies are essential for realizing practical flexible electronic systems. In this review paper, wiring and bonding techniques critical for the industrial‐scale manufacturing of wearable devices are emphasized based on flexible electronics.
Masahito Takakuwa, Kento Yamagishi, Sunghoon Lee, Yusaku Tagawa, Takao Someya, Tomoyuki Yokota   +5 more
wiley   +1 more source