Results 241 to 250 of about 125,060 (320)

Vertical Tunnel Field-Effect Transistor

IEEE Transactions on Electron Devices, 2004
The realization of a novel vertically grown tunnel field-effect transistor (FET) with several interesting properties is presented. The operation of the device is shown by means of both experimental results as well as two-dimensional computer simulations. This device consists of a MBE-grown, vertical p-i-n structure. A vertical gate controls the band-to-
K.K. Bhuwalka, S. Sedlmaier, A.K. Ludsteck, C. Tolksdorf, J. Schulze, I. Eisele   +5 more
openaire   +1 more source

Tunnel field-effect transistors - update

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014
Progress in the development of tunnel field-effect transistors (TFETs) is updated. Selected experimental demonstrations and simulations of sub-60-mV/decade TFETs are compared. A universal SPICE model is discussed which allows the unique attributes of the TFET to be represented across material systems and gate geometries to enable circuit design, with ...
Alan Seabaugh, Hao Lu
openaire   +1 more source

SiGe Tunnel Field Effect Transistors

ECS Transactions, 2008
For conventional MOSFETs band-to-band tunnelling has to be avoided because it causes unintentional leakage currents. On the other hand the Tunnel FET, which basically consists of a gated pin-diode, takes advantage of tunnelling. The influence of technological parameters on device performance as well as scaling rules will be discussed.
Ignaz Eisele, Helmut Lochner, Martin Schlosser   +2 more
openaire   +1 more source

Tunneling Field Effect Transistor Technology

2016
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Zhang, Lining, Chan, Mansun
openaire   +2 more sources

Axial SiGe Heteronanowire Tunneling Field-Effect Transistors

Nano Letters, 2012
We present silicon-compatible trigated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high I(ON) ~ 2 μA/μm, fully suppressed ambipolarity, and a subthreshold slope SS ~ 140 mV ...
Son T, Le, P, Jannaty, Xu, Luo, A, Zaslavsky, Daniel E, Perea, Shadi A, Dayeh, S T, Picraux   +6 more
openaire   +2 more sources

Silicene Nanoribbon Tunnel Field Effect Transistor

ECS Meeting Abstracts, 2016
Scaling of metal oxide semiconductor field effect transistor (MOSFET) following the Moore’s law is approaching to its near end as the power dissipation at the chip level is becoming increasingly difficult to reduce [1]. The International Technology Roadmap for Semiconductors (ITRS) considers several non-classical devices as a future replacement of ...
Md S Fahad, Ashok Srivastava, Ashwani K Sharma, Clay Mayberry, K M Mohsin   +4 more
openaire   +1 more source

Impact of Quantum Confinement on Band-to-Band Tunneling of Line-Tunneling Type L-Shaped Tunnel Field-Effect Transistor

IEEE Transactions on Electron Devices, 2019
An L-shaped tunnel field-effect transistor (LTFET) employs an overlapped gate/channel/source architecture to maximize band-to-band tunneling (BTBT) area. The overlapped channel is very thin and suffers from the geometrical quantum confinement effect (QCE)
Faraz Najam, Y. Yu
semanticscholar   +1 more source

Computational Study of p-n Carbon Nanotube Tunnel Field-Effect Transistor

IEEE Transactions on Electron Devices, 2020
In this article, a new gate-all-around (GAA) p-n carbon nanotube TFET (CNT-TFET) is proposed and compared with its conventional counterpart. The nonequilibrium Green’s function (NEGF) formalism is used to perform the quantum simulations, where the ...
K. Tamersit
semanticscholar   +1 more source

Germanium vertical Tunneling Field-Effect Transistor

Solid-State Electronics, 2011
Abstract The first realization of a pure Germanium bulk vertical Tunneling Field-Effect Transistor (vTFET) and a high Ion/Ioff ratio for a pure Silicon bulk vTFET are both reported. The manufacturing process, the electrical characteristics and key features and the differences of the two varieties of vTFET devices (pure Germanium bulk vTFET and pure ...
D. Hähnel, M. Oehme, M. Sarlija, A. Karmous, M. Schmid, J. Werner, O. Kirfel, I. Fischer, J. Schulze   +8 more
openaire   +1 more source

Novel Tunnel Field Effect Transistors

This research aims to explore the complex challenges regarding reliability and scalability in Heterojunction Dual Gate Vertical Tunnel Field Effect Transistors (HJDGV-TFET). Specifically, it focuses on comparing the hetero buried and stacked buried configurations.
P. Suveetha Dhanaselvam, B. Karthikeyan, K. M. D Sridharshan, C. Muthu Pandian   +3 more
openaire   +1 more source