Results 71 to 80 of about 125,060 (320)

Single-dopant resonance in a single-electron transistor

, 2010
Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector.
B. Roche, I. O. Kulik, I. O. Kulik, L. I. Glazman, M. Houzet, M. Pierre, M. Sanquer, V. N. Golovach, X. Jehl, Y. Takahashi   +9 more
core   +1 more source

Exploiting Two‐Photon Lithography, Deposition, and Processing to Realize Complex 3D Magnetic Nanostructures

Advanced Functional Materials, EarlyView.
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey, Arjen van den Berg, Sandra Ruiz Gomez, Claire Donnelly, Dirk Grundler, Sam Ladak   +5 more
wiley   +1 more source

Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study

Discover Nano, 2023
This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel
Dariush Madadi, Saeed Mohammadi
doaj   +1 more source

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS$_{2}$ transistor

, 2017
Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics.
Bouchiat, Vincent, Chen, Jianhao, Chen, Maolin, Fan, Zhiqiang, Guo, Junjie, Han, Zheng Vitto, Jia, Chuankun, Jiang, Xiangwei, Li, Xiaoxi, Liu, Peizhi, Liu, Xin, Sun, Dongming, Zhang, Zhidong   +12 more
core   +5 more sources

A battery-less, self-sustaining RF energy harvesting circuit with TFETs for µW power applications [PDF]

, 2016
This paper proposes a Tunnel FET (TFET) power management circuit for RF energy harvesting applications. In contrast with conventional MOSFET technologies, the improved electrical characteristics of TFETs promise a better behavior in the process of ...
Moll Echeto, Francisco de Borja, Nunes Cavalheiro, David Manuel, Valtchev, Stanimir   +2 more
core   +1 more source

Theoretical study of phosphorene tunneling field effect transistors [PDF]

Applied Physics Letters, 2015
In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications.
Chang, Jiwon, Hobbs, Chris
openaire   +3 more sources

Two‐Dimensional Materials as a Multiproperty Sensing Platform

Advanced Functional Materials, EarlyView.
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana, Shubhrasish Mukherjee, Dmitrii Litvinov, Magdalena Grzeszczyk, Sergey Grebenchuk, Makars Šiškins, Virgil Gavriliuc, Yihang Ouyang, Changyi Chen, Yuxuan Ye, Meng Yiming, Maciej Koperski   +11 more
wiley   +1 more source

Improvements in reliability and radio frequency performance of junctionless tunnelling field effect transistor using p+ pocket and metal strip

IET Circuits, Devices and Systems, 2023
In this article, a new p+ pocket stacked gate oxide junctionless tunnelling field effect transistor (junction less tunnelling field effect transistor (JLTFET)) which has metal strip in gate oxide layer is proposed for analogue/RF circuit applications ...
Alireza Zirak
doaj   +1 more source

Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals

Advanced Functional Materials, EarlyView.
Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus, Dávid Beke, Lili Vajtai, András Jánossy, László Forró, Ferenc Simon   +5 more
wiley   +1 more source

Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel [PDF]

Journal of Electrical and Computer Engineering Innovations, 2018
Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated.Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel ...
M. Karbalaei, D. Dideban, N. Moezi
doaj   +1 more source