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Study of Dielectric-Modulated Buried Source Horizontally Double-Gate TFET-Based Biosensors. [PDF]

ACS Omega
Yang J, Ding C, Cui G, Xu H, Peng Y, Wang H, Fan M, Gong D.   +7 more
europepmc   +1 more source

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Junctionless Tunnel Field Effect Transistor

IEEE Electron Device Letters, 2013
In this letter, a double-gate junctionless tunnel field effect transistor (JL-TFET) is proposed and investigated. The JL-TFET is a Si-channel heavily n-type-doped junctionless field effect transistor (JLFET), which uses two isolated gates (Control-Gate, P-Gate) with two different metal work-functions to behave like a tunnel field effect transistor ...
Bahniman Ghosh
exaly   +2 more sources

III–V heterostructure tunnel field-effect transistor

Journal of Physics: Condensed Matter, 2018
Abstract The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state switches to overcome the power dissipation challenge in ultra-low power integrated circuits. TFETs take advantage of quantum mechanical tunneling hence exploit a different current control mechanism compared to standard MOSFETs.
C Convertino, C B Zota, H Schmid, A M Ionescu, K E Moselund   +4 more
openaire   +3 more sources

Resonant tunneling field-effect transistors

Superlattices and Microstructures, 1988
We report an experimental project to incorporate double-barrier tunnel structures into three-terminal devices. These devices have the negative-differential-resistance (NDR) features of the double barrier, and the added flexibility of a third controlling electrode.
T.K. Woodward, T.C. McGill, R.D. Burnham, H.F. Chung   +3 more
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Vertical Tunnel Field-Effect Transistor

IEEE Transactions on Electron Devices, 2004
The realization of a novel vertically grown tunnel field-effect transistor (FET) with several interesting properties is presented. The operation of the device is shown by means of both experimental results as well as two-dimensional computer simulations. This device consists of a MBE-grown, vertical p-i-n structure. A vertical gate controls the band-to-
K.K. Bhuwalka, S. Sedlmaier, A.K. Ludsteck, C. Tolksdorf, J. Schulze, I. Eisele   +5 more
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Tunnel field-effect transistors - update

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014
Progress in the development of tunnel field-effect transistors (TFETs) is updated. Selected experimental demonstrations and simulations of sub-60-mV/decade TFETs are compared. A universal SPICE model is discussed which allows the unique attributes of the TFET to be represented across material systems and gate geometries to enable circuit design, with ...
Alan Seabaugh, Hao Lu
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Tunneling Field Effect Transistors

2023
T. S. Arun Samuel, Young Suh Song, Shubham Tayal, P. Vimala, Shiromani Balmukund Rahi   +4 more
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Novel Tunnel Field Effect Transistors

This research aims to explore the complex challenges regarding reliability and scalability in Heterojunction Dual Gate Vertical Tunnel Field Effect Transistors (HJDGV-TFET). Specifically, it focuses on comparing the hetero buried and stacked buried configurations.
P. Suveetha Dhanaselvam, B. Karthikeyan, K. M. D Sridharshan, C. Muthu Pandian   +3 more
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Tunnel Field-Effect Transistor

2022
Chandan Kumar Pandey, Saurabh Chaudhury, Neerja Dharmale, Young Suh Song   +3 more
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