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Impact of gate dielectric constant variation on tunnel field-effect transistors (TFETs)
Solid-State Electronics, 2016Abstract The influence of gate dielectric constant variation on tunnel field-effect transistors (TFETs) has been investigated. High- κ materials in polycrystalline nature induce localized gate dielectric constant variation. According to the simulation results, TFETs show larger standard deviation of threshold voltage ( V th ), subthreshold swing ...
Seung Kyu Kim, Woo Young Choi
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2014
In this work, an analytical model for a dielectric modulated (DM) double gate (DG) Tunnel Field Effect Transistor (TFET) working as a biosensor for label free electrical detection of biomolecules has been proposed. It has been analyzed that the ambipolar behaviour of tunnel field effect transistor can also be used for sensing of the biomolecules when ...
Ajay Singh +3 more
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In this work, an analytical model for a dielectric modulated (DM) double gate (DG) Tunnel Field Effect Transistor (TFET) working as a biosensor for label free electrical detection of biomolecules has been proposed. It has been analyzed that the ambipolar behaviour of tunnel field effect transistor can also be used for sensing of the biomolecules when ...
Ajay Singh +3 more
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Solid-State Electronics, 2018
Abstract Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation.
Sihyun Kim +6 more
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Abstract Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation.
Sihyun Kim +6 more
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2009 10th International Conference on Ultimate Integration of Silicon, 2009
The goal of this paper is to present and to analyze the Tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-“kT/q” swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose
C. Le Royer, F. Mayer
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The goal of this paper is to present and to analyze the Tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-“kT/q” swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose
C. Le Royer, F. Mayer
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Analysis of Cylindrical Gate Junctionless Tunnel Field Effect Transistor (CG-JL-TFET)
2015 Annual IEEE India Conference (INDICON), 2015In this paper, a Cylindrical Gate Junctionless Tunnel Field Effect Transistor (CG-JL-TFET) has been investigated. This work is based on the simulation study done using Sentaurus. The electrical characteristics such as surface potential, energy band, electric field and drain current of the CG-JL-TFET) has been studied. The impact of different gate oxide
null Ajay +3 more
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Investigation of Tunnel Field-Effect Transistors (TFETs) for Label-Free Biosensing
2022Suneet Kumar Agnihotri +3 more
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Analog/RF Performance Analysis of GAA-GNR Tunnel Field-Effect Transistor (TFET)
Lecture Notes in Electrical Engineering, 2022Nitai Paitya, Jayabrata Goswami
exaly
Tunnel Field Effect Transistor (TFET): A Review
International Journal of Materials Technology and InnovationFatma Omar, Tarek Abdolkader
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