Interfacial quality to control tunnelling magnetoresistance
Frontiers in Physics, 2022 Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally.
Atsufumi Hirohata +4 more
doaj +1 more source
Tunnel magnetoresistance detection of skyrmions
Journal of Magnetism and Magnetic Materials, 2022 Micromagnetic simulations are used to investigate different strategies for tunnel magnetoresistance detection of the Neel skyrmion core direction and Bloch skyrmion chirality. When a Neel skyrmion passes beneath a perpendicularly magnetized dot separated
Hao Chen, William Bouckaert, S. Majetich
semanticscholar +1 more source
Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions
Physical Review Letters, 2022 Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics.
Jianting Dong +7 more
openaire +3 more sources
Spin effects on transport and zero-bias anomaly in a hybrid Majorana wire-quantum dot system
Scientific Reports, 2023 We examine the impact of spin effects on the nonequilibrium transport properties of a nanowire hosting Majorana zero-energy modes at its ends, coupled to a quantum dot junction with ferromagnetic leads.
Alexandre Huguet +2 more
doaj +1 more source
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions [PDF]
, 2020 Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining ...
T. Scheike +6 more
semanticscholar +1 more source
Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions [PDF]
Physical Review B, 2009 The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in ...
Matos-Abiague, Alex, Fabian, Jaroslav
openaire +3 more sources
Tunneling anisotropic magnetoresistance of helimagnet tunnel junctions [PDF]
Physical Review B, 2010 We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in the tunnel junction and to an effective spin-orbit coupling induced by the topology of the localized magnetic ...
Jia, Chenglong, Berakdar, Jamal
openaire +2 more sources
Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides. [PDF]
Nano letters (Print), 2019 Materials that demonstrate large magnetoresistance have attracted significant interest for many decades. Recently, extremely large tunnel magnetoresistance (TMR) has been reported by several groups across ultrathin CrI3 by exploiting the weak ...
Hyun Ho Kim +6 more
semanticscholar +1 more source
One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure. [PDF]
Nano letters (Print), 2018 We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI3, as the active layer.
Hyun Ho Kim +7 more
semanticscholar +1 more source
Tunnel magnetoresistance in magnetic tunnel junctions with FeAlSi electrode
AIP Advances, 2021 (001)-oriented FeAlSi polycrystalline thin films with a flat surface and B2-ordered structure were grown on thermally oxidized SiO2 substrates using MgO buffer layers.
Shoma Akamatsu +4 more
doaj +1 more source