Results 41 to 50 of about 619,792 (270)

Electrical detection of magnetic skyrmions by non-collinear magnetoresistance [PDF]

, 2015
Magnetic skyrmions are localised non-collinear spin textures with high potential for future spintronic applications. Skyrmion phases have been discovered in a number of materials and a focus of current research is the preparation, detection, and ...
A Fert, A Fert, AD Kent, AN Bogdanov, André Kubetzka, B Dupé, Bertrand Dupé, C Gould, CH Marrows, Christian Hanneken, Fabian Otte, G Binasch, IE Dzyaloshinskii, J Sampaio, J Tersoff, K von Bergmann, Kirsten von Bergmann, KM Seemann, LM Sandratskii, M Bode, M Jullière, MN Baibich, N Nagaosa, N Romming, N Romming, Niklas Romming, NS Kiselev, PM Levy, R Wiesendanger, R Wiesendanger, Roland Wiesendanger, S Datta, S Heinze, S Mühlbauer, SSP Parkin, Stefan Heinze, T Moriya, TR McGuire, XZ Yu   +38 more
core   +1 more source

Tunneling Anisotropic Magnetoresistance: A Spin-Valve-Like Tunnel Magnetoresistance Using a Single Magnetic Layer [PDF]

Physical Review Letters, 2004
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device.
Gould, C., Rüster, C., Jungwirth, T., Girgis, E., Schott, G. M., Giraud, R., Brunner, K., Schmidt, G., Molenkamp, L. W.   +8 more
openaire   +3 more sources

Large magnetoresistance using hybrid spin filter devices [PDF]

, 2001
A magnetic "spin filter" tunnel barrier, sandwiched between a non-magnetic metal and a magnetic metal, is used to create a new magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration.
de Jonge, W. J. M., Ha, J. K., Kohlhepp, J. T., LeClair, P., Swagten, H. J. M., van de Vin, C. H.   +5 more
core   +2 more sources

Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction [PDF]

, 2014
We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations.
Amin, V. P., Jungwirth, T., Sinova, Jairo, Zemen, J., Železný, J.   +4 more
core   +2 more sources

Resonant Inversion of Tunneling Magnetoresistance

Physical Review Letters, 2003
Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 microm(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Büttiker theory explain this
Tsymbal, Evgeny Y., Sokolov, Andrei, Sabiryanov, Ildar F., Doudin, Bernard   +3 more
openaire   +3 more sources

Large and Local Magnetoresistance in a State-of-the-Art Perpendicular Magnetic Medium

Nanotechnology, Science and Applications, 2021
Morgan Williamson,1,2 Cheng Wang,3 Pin-Wei Huang,3 Ganping Ju,3 Maxim Tsoi1,2 1Physics Department, University of Texas at Austin, Austin, TX 78712, USA; 2Texas Materials Institute, University of Texas at Austin, Austin, TX 78712, USA; 3Fremont Research ...
Williamson M, Wang C, Huang PW, Ju G, Tsoi M   +4 more
doaj  

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

, 2010
Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73%
Auge, Alexander, Drewello, Volker, Münzenberg, Markus, Reiss, Günter, Schebaum, Oliver, Schuhmann, Henning, Seibt, Michael, Thomas, Andy   +7 more
core   +1 more source

Phase-Change Control of Interlayer Exchange Coupling [PDF]

, 2019
Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this paper, we utilize
Fan, Xiaofei, Fullerton, Eric, Jiang, Lei, Lin, Xiaoyang, Mangin, Stephane, Shao, Qiming, Si, Zhizhong, Wang, Xinhe, Wei, Guodong, Zhang, Xueying, Zhao, Weisheng   +10 more
core   +1 more source

Large Tunneling Magnetoresistance in VSe2/MoS2 Magnetic Tunnel Junction. [PDF]

ACS Applied Materials and Interfaces, 2019
Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe2/MoS2 heterojunction ...
Jiaqi Zhou, Junfeng Qiao, C. Duan, A. Bournel, Kang L. Wang, Weisheng Zhao   +5 more
semanticscholar   +1 more source

Conducting ballistic magnetoresistance and tunneling magnetoresistance: Pinholes and tunnel barriers [PDF]

Applied Physics Letters, 2000
This letter shows that conducting ballistic and tunneling magnetoresistances have identical physical treatments and, therefore, it is not possible to distinguish whether an experiment is measuring, in oxide barriers, electron conduction through pinholes or tunneling because both types of conduction are governed by the same physics.
openaire   +2 more sources