Results 171 to 180 of about 5,733 (288)
A 3D conductive net including HfC(N) conductive nanodomains and in‐situ carbon ribbons was generated within the amorphous SiHfBCN matrix by a new molecular‐level composition and microstructure design strategy, making a smooth and dense polymer‐derived SiHfBCN ceramic coatings exhibits excellent electrical conductivity, wide‐temperature sensing, cycling
Xichao Dong +6 more
wiley +1 more source
Dirac metallic FeB<sub>2</sub>-induced low Schottky barrier and electrically tunable Schottky contact in FeB<sub>2</sub>/MoS<sub>2</sub> van der Waals heterostructure. [PDF]
Nhan TT, Cuong NQ, Nguyen CV, Phuc HV.
europepmc +1 more source
Dual Operating Mode Imaging Photodetector Based on Electrical Modulation of p‐Si/MgO/ZnO
This research innovatively introduces the MgO barrier layer and utilizes the device structure advantages of MSM to achieve breakthrough dual‐band response output of p‐Si/MgO/ZnO photodetectors under bias modulation. It has been successfully applied in dual‐mode imaging, laying the foundation for the development of third‐generation imaging technology ...
Hepeng Zhao +4 more
wiley +1 more source
Suppressing Gate-Induced Drain Leakage with an Asymmetric Gate Design in HiPco CNT FETs. [PDF]
Ma H, Gu S, Zhai M, Liu H.
europepmc +1 more source
This work reveals a “Photovoltaic‐Capacitance” coupling mechanism in stacked Ga2O3/ZnO devices, defining the ZnO/graphene interface as a novel Photovoltaic Dynamic‐Capacitor (PDC). The wavelength‐selective bipolar response enables a physical layer secure communication protocol based on ternary optical logic (“1,” “0,” “−1”).
Songqi Zhao +6 more
wiley +1 more source
Tunneling Splittings in the Water Hexamer Prisms Composed of Stacked Water Trimers. [PDF]
Tokić N, Cvitaš MT.
europepmc +1 more source
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Ge/In<sub>0.53</sub>Ga<sub>0.47</sub>As heterojunction based doping less TFET for high sensitivity label free biosensing applications. [PDF]
Jaya M, Lorenzo R.
europepmc +1 more source
ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker +3 more
wiley +1 more source

