Results 201 to 210 of about 5,733 (288)
Numerical simulations were employed to boost industrial TOPCon cells from 25.5% to 26.07% by suppressing J0e,metal,eff without compromising ρc with a dual optimization strategy: (1) engineering the selective emitter sheet resistance (Rsh_SE) to 117 Ω/□ and (2) reducing the LECO‐induced partial metal contact ratio (fpmc) to 1%.
Jiayu Xu +11 more
wiley +1 more source
Tunable Switching Mechanisms in HfZrO<sub>2</sub>-Based Tunnel Junctions for High-Performance Synaptic Arrays. [PDF]
You J +8 more
europepmc +1 more source
identifier:oai:t2r2.star.titech.ac.jp ...
openaire
Large area crystalline silicon solar cells fabricated on ultra‐thin (80 μ$$ \upmu $$m) Si wafer featuring polysilicon‐based passivating contacts on both sides can further increase the energy output per unit weight. In this work, the large area, screen‐printed solar cells with high temperature fire‐through contacts, yielded an exceptional efficiency‐to ...
Yuchi Lan +5 more
wiley +1 more source
Unexpected Suppression of Double-Proton Tunneling Induced by Quantum Barriers from Zero-Point Energy. [PDF]
Greer EM +5 more
europepmc +1 more source
This work reveals that glass frit chemistry governs acetic‐acid‐induced corrosion and damp‐heat stability in LAF‐processed TOPCon modules. Compared with a Pb/B‐rich frit, a Ba/Zn‐modified frit preserves the Ag–Si interface, suppresses contact‐resistance increase and improves module reliability.
Jiexi Fu +10 more
wiley +1 more source
Atomically sharp heteroepitaxial Hf<sub>2</sub>C edge contacts enabling barrier-free carrier injection in 2D HfSe<sub>2</sub> semiconducting channels. [PDF]
Bhin G +10 more
europepmc +1 more source
MXene‐Based Flexible Memory and Neuromorphic Devices
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li +13 more
wiley +1 more source
Interfacial magnetic coupling in CrI<sub>3</sub>/CrBr<sub>3</sub> heterostructures via tunneling magnetoresistance. [PDF]
Wu B +6 more
europepmc +1 more source
Single‐particle‐level investigation using scanning tunneling spectroscopy reveals electronic structure and type‐I band alignment of individual CsPbBr3@FAPbBr3 core‐crown nanoplatelet. Crown passivation suppresses deep trap states by 47% and markedly improves electrical stability under repeated bias sweeps.
Shaocheng Shen +8 more
wiley +1 more source

