Results 31 to 40 of about 19,972 (281)
Electronic Structure of Oxide Interfaces: A Comparative Analysis of GdTiO$_3$/SrTiO$_3$ and LaAlO$_3$/SrTiO$_3$ Interfaces [PDF]
Emergent phases in the two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides have attracted great attention in the past decade.
Banerjee, Hrishit +3 more
core +3 more sources
Population-inversion and gain estimates for a semiconductor TASER [PDF]
We have investigated a solid-state design advanced (see Soref et al, in SPIE Proceedings, vol. 3795, p, 516, 1999) to achieve a terahertz-amplification-by-the-stimulated-emision-of-radiation (TASER), The original design was based on light-to heavy-hole ...
Harrison, P., Soref, R.A.
core +1 more source
Type-II GaAsSb/GaAsN superlattice solar cells [PDF]
Dilute nitride GaAsSbN is an ideal candidate to form the 1-1.15 eV lattice-matched sub-cell that would significantly enhance the performance of 3- and 4-junction solar cells. However, growth problems inherent to this quaternary alloy lead typically to a poor crystal quality that limits its applicability. Better compositional control and crystal quality
Gonzalo, A. +8 more
openaire +3 more sources
The thermal stress, significantly impacting the performance of infrared detectors, is typically caused by the thermal mismatch between adjacent materials.
Yong Xue +7 more
doaj +1 more source
Bandgap Engineering in InAs/GaSb II Superlattices: Modulation and Vacancy Defects Analysis
The computational analysis of InAs/GaSb type-II superlattices utilizing density functional theory (DFT) with pseudopotentials has been performed. The PBE+U method was employed to correct for the strong correlation effects of the P orbitals of In, As, Ga,
Yan Jiang +6 more
doaj +1 more source
In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported
U. Zavala-Moran +7 more
doaj +1 more source
Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array
High-performance InAs/GaSb type-II superlattice infrared detectors and focal plane arrays (FPAs) are normally grown by molecular beam epitaxy (MBE).
Yan Teng +11 more
doaj +1 more source
Three-photon states in nonlinear crystal superlattices
It has been a longstanding goal in quantum optics to realize controllable sources generating joint multiphoton states, particularly, photon triplet with arbitrary spectral characteristics.
A. B. U’Ren +7 more
core +1 more source
The versatile precursor‐assisted soft sphere close packing during slot‐die coating is investigated with in situ X‐ray scattering. The soft crystallization pathways towards a close packing involve multistep structural transitions such as surface nucleation, in‐plane, and out‐of‐plane crystallization.
Guangjiu Pan +14 more
wiley +1 more source
We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy
Arash Dehzangi +2 more
doaj +1 more source

