Results 161 to 170 of about 3,668 (177)

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory

IEEE Transactions on Nuclear Science, 2018
Dakai Chen, Edward P Wilcox, R Ladbury
exaly  

Predictive Modeling of Channel Potential in 3-D NAND Flash Memory

IEEE Transactions on Electron Devices, 2014
Yoon Kim, Myounggon Kang
exaly  

First Demonstration of Threshold Voltage Modeling in Multi-Hole V-NAND Flash Architecture with Noncircular Channel Hole Profiles

2025 IEEE International Memory Workshop (IMW)
Chanyang Park, Min-Kyu Jeong, Taein Lee, Sejun Park, Jung Hoon Lee, Yujin Lee, Seungwan Hong, Sunghoi Hur   +7 more
openaire   +1 more source

All-optical NAND gate using integrated SOA-based Mach–Zehnder interferometer

Optical Fiber Technology, 2006
Xiaohua Ye, Peida Ye
exaly  

Natural Local Self-Boosting Effect in 3D NAND Flash Memory

IEEE Electron Device Letters, 2017
Myounggon Kang, Yoon Kim
exaly  

3D NAND Flash Based on Planar Cells

Computers, 2017
exaly  

Three-Dimensional nand Flash for Vector–Matrix Multiplication

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2019
Panni Wang, Feng Xu, Bin Gao
exaly  

Reliability of Solid-State Drives Based on NAND Flash Memory

Proceedings of the IEEE, 2017
Neal Mielke, Ivan Kalastirsky
exaly  

Bypass Resistive RAM With Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications

IEEE Electron Device Letters
Geonhui Han, Kyumin Lee, Dongmin Kim, Yoori Seo, Jinwoo Lee, Jinmyung Choi, Dongho Ahn, Sechung Oh, Hyunsang Hwang   +8 more
openaire   +1 more source

Bandgap-Engineered Boron Oxynitride Tunneling Layer for Reliable PLC operation of 3D V-NAND Flash Memory Devices

2025 IEEE International Electron Devices Meeting (IEDM)
Dae Hyun Kang, Jaejoong Jeong, Youngkeun Park, Yungjun Kim, Dong Hun Sin, Han Mei Choi, Byung Jin Cho   +6 more
openaire   +1 more source