Results 161 to 170 of about 4,326 (205)

DNA Sequential Logic Circuits for Reversible Counters and Dynamic Biomolecular Sensing. [PDF]

Adv Sci (Weinh)
Xie T, Li C, Hu M, Zhong X, Xiao J, Zhang Z, Wang Z, Wu T.   +7 more
europepmc   +1 more source

Dual-directional CIM-based non-volatile SRAM for instant-on/off energy-constrained edge AI devices. [PDF]

Sci Rep
Hemmasi SP, Moaiyeri MH, Eslami N, Ebrahimi B.   +3 more
europepmc   +1 more source

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7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers

2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016
Today's explosive demand for data transfer is accelerating the development of non-volatile memory with even larger capacity and cheaper cost. Since the introduction of 3D technology in 2014 [1], V-NAND is believed to be a successful alternative to planar NAND and is quickly displacing planar NAND in the SSD market, due to its performance, reliability ...
Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doogon Kim, Young-Sun Min, Moo-Sung Kim, An-Soo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doo-Sub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kye-Hyun Kyung, Jeong-Hyuk Choi   +29 more
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Self-Heating Effects in 3-D Vertical-NAND (V-NAND) Flash Memory

IEEE Transactions on Electron Devices, 2020
Self-heating effects (SHEs) were investigated through simulations for 3-D V- NAND flash memory. The SHEs are varied by adjusting the thickness of the poly-crystalline channel, the number of stacked cells along with a bitline, and the configuration of the multilevel cell.
Gyeong-Jun Yun, Dae-Hwan Yun, Jun-Young Park, Seong-Yeon Kim, Yang-Kyu Choi   +4 more
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11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory

2017 IEEE International Solid-State Circuits Conference (ISSCC), 2017
The advent of emerging technologies such as cloud computing, big data, the internet of things and mobile computing is producing a tremendous amount of data. In the era of big data, storage devices with versatile characteristics are required for ultra-fast processing, higher capacity storage, lower cost, and lower power operation. SSDs employing 3D NAND
Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il-han Park, Hyun-Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-lo Ahn, Jiyoung Lee, Jong-hoon Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sung-Hoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-yub Lee, Ki-Tae Park, Kye-hyun Kyung   +43 more
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Effect of Device Scaling on Lateral Migration Mechanism of Electrons in V-NAND

2019 Silicon Nanoelectronics Workshop (SNW), 2019
In this paper, we analyzed lateral migration (LM) mechanism of V-NAND occurring during retention operation depending on scaling of geometric parameters using TCAD simulation. Modeling for LM was performed and the behavior of time-constant (τ) parameter used for modeling was analyzed.
Changbeom Woo, Shinkeun Kim, Jaeyeol Park, Hyungcheol Shin   +3 more
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Proposal of Tilt-Axis Adjustment in V-NAND Plan-View without Si Substrate Using Automated Metrology of Transmission Electron Microscope

International Symposium for Testing and Failure Analysis, 2023
Abstract In this paper, we propose a method to get more accurate metrology data using the tilt-axis on a transmission electron microscope (TEM) to compensate for microscopic tilt-axis changes that occur during focused ion beam (FIB) sample preparation processing.
Dong-yeob Kim, Su-yeon Kim, Woo-jun Kwon, Min-kook Kim, Christopher H. Kang   +4 more
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7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers, 2015
Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as smaller tPROG, lower power consumption and longer endurance. For many years, every effort has been made to shrink die size to lower cost and to improve performance.
Jae-Woo Im, Woo-Pyo Jeong, Doo-Hyun Kim, Sang-Wan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, You-Se Kim, Hyun-Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jin-Ho Ryu, Sang-Won Shim, Kyung-Tae Kang, Sung-Ho Choi, Jeong-Don Ihm, Young-Sun Min, In-Mo Kim, Doo-Sub Lee, Ji-Ho Cho, Oh-Suk Kwon, Ji-Sang Lee, Moo-Sung Kim, Sang-Hyun Joo, Jae-Hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kye-Hyun Kyung, Jeong-Hyuk Choi   +33 more
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Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory Using a Plugged Pillar-Shaped Heat Sink

IEEE Electron Device Letters, 2019
Self-heating effects (SHEs) in 3-D V-NAND flash memory are investigated using simulations. First, temperature increase is estimated during the read operation, and a hot spot region along the bit-line is identified. Then, a novel bilayered macaroni filler is proposed to relieve the SHEs.
Jun-Young Park, Dae-Hwan Yun, Seong-Yeon Kim, Yang-Kyu Choi   +3 more
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Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory

ACS Applied Materials & Interfaces
To overcome the limitation of conventional flash memory, electrochemical random-access memory (ECRAM)-based bypass memory (bypass RRAM) has been proposed as a potential candidate for V-NAND memory application. While bypass RRAM demonstrates excellent memory characteristics through ion hopping conduction, the key parameters governing multilevel cell ...
Geonhui Han, Jongseon Seo, Junghoon Park, Minji Hong, Juhyung Kim, Kilho Lee, Wanki Kim, Daewon Ha, Hyunsang Hwang   +8 more
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