Results 171 to 179 of about 10,230,919 (179)

Scaling Directions for 2D and 3D NAND Cells

2012
Krishna Parat, Akira Goda
exaly  

Highly Scalable Vertical Bypass RRAM Using Interface-Type Resistive Switching Mechanism for V-Nand memory Applications

IEEE Transactions on Electron Devices
Geonhui Han, Jongseon Seo, Kyumin Lee, Dongmin Kim, Yoori Seo, Jinwoo Lee, Jinmyung Choi, Dongho Ahn, Sechung Oh, Hyunsang Hwang   +9 more
openaire   +1 more source

Effective Deep Learning Technology for Predicting High-Aspect Ratio Contact Hole Striation Problem in 3D V-NAND Flash Memory

Extended Abstracts of the 2025 International Conference on Solid State Devices and Materials
BYUNG YONG CHOI, HOYUN JUNG, JONGIK HONG, YOUNGCHAN PARK, BONG-TAE PARK, SEUNGWAN HONG, SUNG HOI HUR   +6 more
openaire   +1 more source

Barrier Engineering of Silicon-Doped Boron Nitride in the Charge Trap Layer for High Performance 3-D V-nand Flash Memory

IEEE Transactions on Electron Devices
Dae Hyun Kang, Jaejoong Jeong, Youngkeun Park, Dong Hun Sin, Han Mei Choi, Byung Jin Cho   +5 more
openaire   +1 more source

Analysis on Heterogeneous SSD Configuration With Quadruple-Level Cell (QLC) NAND Flash Memory

2019
Ken Takeuchi
exaly  

Improvement of Thermal Stability in Dual Mechanism Memory Using Hf_xAl_1-xO Blocking Layer for 3D V-NAND Flash Application

IEEE Electron Device Letters
Jun Hong Chu, Sheung Hun Kim, Changyeon Kang, Eui Joong Shin, Jaejoong Jeong, Youngkeun Park, Byung Jin Cho   +6 more
openaire   +1 more source

V-Ramp V_BD Prediction Method Using OCD-Spectrum and Deep-Learning, and Application to Early Detection of V-NAND Low Metal Reliability Risk

2024 IEEE International Reliability Physics Symposium (IRPS)
SungMan Rhee, Sung-Pyo Park, Sangku Park, Yuchul Hwang, Sangwoo Pae, Jun Meng, Yoonju Park   +6 more
openaire   +1 more source

Enhancing In-Package Thermal Management of 3D V-NAND Flash Memory Using Under-Periphery Thermal Pins (UPTPs) and Materials-and-Structure Co-Design

2026 IEEE 76th Electronic Components and Technology Conference (ECTC)
Eun Pyo Hong, Jung Su Yoon, Ho Beom Han, Suk-Kang Sung, Sang Won Yoon   +4 more
openaire   +1 more source

A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.

Dongku Kang, Minsu Kim 0004, Suchang Jeon, Wontaeck Jung, Jooyong Park, Gyo Soo Choo, Dong-Kyo Shim, Anil Kavala, Seungbum Kim, Kyung-Min Kang, Jiyoung Lee, Kuihan Ko, Hyun Wook Park, ByungJun Min, Changyeon Yu, Sewon Yun, Nahyun Kim, Yeonwook Jung, Sungwhan Seo, Sunghoon Kim 0001, Moo Kyung Lee, Joo-Yong Park, James C. Kim, Young San Cha, Kwangwon Kim, Youngmin Jo, Hyun-Jin Kim, Youngdon Choi, Jindo Byun, Ji-hyun Park, Kiwon Kim, Tae-Hong Kwon, Young-Sun Min, Chiweon Yoon, Youngcho Kim, Dong-Hun Kwak, Eungsuk Lee, Wook-Ghee Hahn, Ki-Sung Kim, Kyungmin Kim, Euisang Yoon, Won-Tae Kim 0004, Inryul Lee, Seunghyun Moon, Jeong-Don Ihm, Dae-Seok Byeon, Ki-Whan Song, Sangjoon Hwang 0001, Kyehyun Kyung   +48 more
openaire   +1 more source