Results 171 to 180 of about 8,846,054 (209)

Intrinsically flexible multimode reconfigurable transistors for polymorphic circuits and neuromorphic devices. [PDF]

Nat Commun
Wang W, Qiu R, Zhu J, Zhu T, Wang J, Liu D, Liang J, Wang C, Zhang S, Wang Z, Huang Q, Wang X, Zhang M.   +12 more
europepmc   +1 more source

Flexible monolithic 3D complementary circuits based on 2D semiconductor inks. [PDF]

Nat Commun
Zou T, Heo S, Reo Y, Ryu GS, Lee J, Kim M, Kim S, Byeon G, Park JS, Xu W, Noh YY.   +10 more
europepmc   +1 more source

Telecom-wavelength quantum teleportation using frequency-converted photons from remote quantum dots. [PDF]

Nat Commun
Strobel T, Vyvlecka M, Neureuther I, Bauer T, Schäfer M, Kazmaier S, Sharma NL, Joos R, Weber JH, Nawrath C, Nie W, Bhayani G, Hopfmann C, Becher C, Michler P, Portalupi SL.   +15 more
europepmc   +1 more source

Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WS₂ Nanosheet Field-Effect Transistors for Area-Efficient Integrated Circuit. [PDF]

Small
Ma J, Yang E, Lee C, Seok J, Chang J.
europepmc   +1 more source

Realization of inverse-design magnonic logic gates. [PDF]

Sci Adv
Zenbaa N, Majcen F, Abert C, Bruckner F, Mauser NJ, Schrefl T, Wang Q, Suess D, Chumak AV.   +8 more
europepmc   +1 more source

Impact of Obstetric History on Preterm Birth: An Observational Study at a Tertiary Care Hospital in North India. [PDF]

Cureus
Baig I, Rastogi PK, Deo S, Nigam N, Lal N, Gupta S, Sharif N, Singhal R, Baig AS, Rastogi P.   +9 more
europepmc   +1 more source

Soft reconfigurable logic gates with high-frequency electrical switching. [PDF]

Sci Adv
Xu Y, Zhang F, Rothemund P, Keplinger C, Xu Z, Li J, Zheng Q, Zhu J.   +7 more
europepmc   +1 more source

Analysis of the Ambipolar Conduction of Tin Monoxide Thin-Film Transistors with Indium Tin Oxide Electrodes. [PDF]

ACS Appl Mater Interfaces
Mun SA, Park S, Lee MH, Lee Y, Kang S, Choi J, Ham J, Choi J, Hwang CS.   +8 more
europepmc   +1 more source

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Numerical Simulations of Silicon Nitride Etching in V-NAND Structures

2023 IEEE 23rd International Conference on Nanotechnology (NANO), 2023
This work proposes the modeling for predicting the etching process of silicon nitride films in phosphoric acid. The model is established based on the Eley-Rideal surface reaction mechanism and validated by the comparisons against experimental data.
Seoyeon Choi, Pilbum Kim, SangWook Park, Kiho Kim, Yongjae Jung, Jaeick Hong, Song-Yun Kang   +6 more
openaire   +2 more sources

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers

2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016
Today's explosive demand for data transfer is accelerating the development of non-volatile memory with even larger capacity and cheaper cost. Since the introduction of 3D technology in 2014 [1], V-NAND is believed to be a successful alternative to planar NAND and is quickly displacing planar NAND in the SSD market, due to its performance, reliability ...
Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doogon Kim, Young-Sun Min, Moo-Sung Kim, An-Soo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doo-Sub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kye-Hyun Kyung, Jeong-Hyuk Choi   +29 more
semanticscholar   +5 more sources