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Applications of remote epitaxy and van der Waals epitaxy [PDF]

open access: yesNano Convergence, 2023
Epitaxy technology produces high-quality material building blocks that underpin various fields of applications. However, fundamental limitations exist for conventional epitaxy, such as the lattice matching constraints that have greatly narrowed down the ...
Ilpyo Roh   +8 more
doaj   +4 more sources

Revisiting the van der Waals Epitaxy in the Case of (Bi0.4Sb0.6)2Te3 Thin Films on Dissimilar Substrates [PDF]

open access: yesNanomaterials, 2022
Ultrathin films of the ternary topological insulator (Bi0.4Sb0.6)2Te3 are fabricated by molecular beam epitaxy. Although it is generally assumed that the ternary topological insulator tellurides grow by van der Waals epitaxy, our results show that the ...
Liesbeth Mulder   +4 more
doaj   +2 more sources

Universal Oriented van der Waals Epitaxy of 1D Cyanide Chains on Hexagonal 2D Crystals [PDF]

open access: yesAdvanced Science, 2020
The atomic or molecular assembly on 2D materials through the relatively weak van der Waals interaction is quite different from the conventional heteroepitaxy and may result in unique growth behaviors.
Yangjin Lee   +18 more
doaj   +2 more sources

Van der Waals Epitaxy of III-Nitrides and Its Applications. [PDF]

open access: yesMaterials (Basel), 2020
III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be a useful route to relax the ...
Chen Q   +5 more
europepmc   +4 more sources

Two-dimensional antimonene single crystals grown by van der Waals epitaxy [PDF]

open access: yesNature Communications, 2016
Several two-dimensional materials have been synthesized to date, yet elemental materials, consisting of individual atomic species, are still scarce. Here, the authors synthesize few-layer, monocrystalline polygons of antimonene via van der Waals epitaxy ...
Jianping Ji   +11 more
doaj   +2 more sources

Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations [PDF]

open access: yesNature Communications, 2019
Vertically stacked twisted layers of two-dimensional materials can trigger exciting fundamental physics. Here, authors report controlled growth of 30° twisted few-layer SnS2 over SnS2 via van der Waals epitaxy of an SnS intermediate and its ...
Peter Sutter   +4 more
doaj   +2 more sources

Coincident-site lattice matching during van der Waals epitaxy. [PDF]

open access: yesSci Rep, 2015
AbstractVan der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb2Te3films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6√3 × 6√3)R30° buffer layer) are used to study the vdW epitaxy between two 2-dimensionally (2D ...
Boschker JE   +5 more
europepmc   +6 more sources

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications [PDF]

open access: yesNanomaterials, 2020
Bi2Se3 possesses a two-dimensional layered rhombohedral crystal structure, where the quintuple layers (QLs) are covalently bonded within the layers but weakly held together by van der Waals forces between the adjacent QLs.
Shifeng Wang   +6 more
doaj   +2 more sources

van der Waals epitaxy of Mn-doped MoSe2 on mica [PDF]

open access: yesAPL Materials, 2019
The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report here a bottom-
M. T. Dau   +10 more
doaj   +5 more sources

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂. [PDF]

open access: yesMaterials (Basel), 2018
Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials.
Yin Y   +12 more
europepmc   +3 more sources

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