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van der Waals epitaxy and photoresponse of two-dimensional CdSe plates

Nanoscale, 2016
Here we demonstrate the first growth of two-dimensional (2D) single-crystalline CdSe plates on mica substrates via van der Waals epitaxy. The as-synthesized 2D plates exhibit hexagonal, truncated triangular and triangular shapes with the lateral size around several microns.
Dan-Dan, Zhu   +5 more
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Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures

Nanoscale, 2016
Two-dimensional tungsten diselenide (WSe2) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary to achieve efficient charge transport across the interface of layered WSe2-graphene, a semiconductor to semimetal junction with a ...
Yu-Chuan, Lin   +10 more
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Van der Waals Epitaxial Growth of α-Alumina Nanocrystals on Mica

Science, 1993
Lattice mismatch stresses, which severely restrict heteroepitaxial growth, are greatly minimized when thin alumina films are grown by means of van der Waals forces on inert mica substrates. A 10-nanometer-thick epitaxial film exhibits crystallographic sixfold symmetry, a lattice constant close to that of the basal plane [0001] of α-alumina (sapphire ...
S, Steinberg   +7 more
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Strained-Layer van der Waals Epitaxy in a Langmuir-Blodgett Film

Science, 1993
Atomic force microscope images of Langmuir-Blodgett films of lead and manganese fatty acid salts show that these monolayers have long-range order and are oriented with respect to the mica substrate, although the lattice symmetries of the monolayers and substrate are dramatically different.
R, Viswanathan   +2 more
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Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs

Nano Letters, 2019
We have achieved heteroepitaxial stacking of a van der Waals ( vdW) monolayer metal, 1T'-WTe2, and a semiconductor, 2H-WSe2, in which a distinctively low contact barrier was established across a clean epitaxial vdW gap. Our epitaxial 1T'-WTe2 films were identified as a semimetal by low temperature transport and showed the robust breakdown current ...
Chang-Soo Lee   +13 more
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Vertical Heterostructures of Layered Metal Chalcogenides by van der Waals Epitaxy

Nano Letters, 2014
We report a facile chemical vapor deposition (CVD) growth of vertical heterostructures of layered metal dichalcogenides (MX2) enabled by van der Waals epitaxy. Few layers of MoS2, WS2, and WSe2 were grown uniformly onto microplates of SnS2 under mild CVD reaction conditions (
Xingwang, Zhang   +7 more
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Van der Waals epitaxy for highly lattice-mismatched systems

Journal of Crystal Growth, 1999
One of the major obstacles to realize various kinds of heterostructures is the lattice matching between constituent materials. This difficulty has been proved to be overcome if one uses the interface having van der Waals nature. This kind of interface can be formed when a layered material is grown on a cleaved face of another layered material. Moreover,
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heterointerfaces prepared by Van der Waals epitaxy

Journal of Crystal Growth, 1995
O. Lang   +6 more
openaire   +1 more source

Coaxial nanowires from van der Waals epitaxy

SPIE Newsroom, 2013
Xiuling Li, Parsian Mohseni
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Intrinsic flexoelectricity of van der Waals epitaxial thin films

Physical Review B, 2022
Longlong Shu   +9 more
openaire   +1 more source

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