Results 231 to 240 of about 5,716,928 (282)

Microscopic Mechanism of Glass Surface Activation, Annealing and Etching on Glass-Ti/Cu Interfacial Adhesion. [PDF]

Micromachines (Basel)
Shi T, Yang W, Li Q, Yang J, Li Z, Hong H, Zhang Z, Zhang G, Chang AC.   +8 more
europepmc   +1 more source

Quasi-anisotropic wet etching of glass creates inclined microstructures for advanced optical and MEMS devices. [PDF]

Microsyst Nanoeng
Yu J, Li F, Sun H, Zhu Y, Shi Y, Wang R, Du L, Li Y, Wu M, Liu J.   +9 more
europepmc   +1 more source

Wet etching of single crystal quartz

, 1998
Rangsten, Pelle,, Bäcklund, Ylva,, Vangbo, Mattias,, Hedlund, Christer,   +3 more
core  

Wet-chemical etching of SrMoO3 thin films

Materials Letters, 2016
SrMoO3 is a perovskite oxide material with very high electrical conductivity, exhibiting great potential for integration into electronic devices. Here, we present a method for controlled wet-chemical etching of SrMoO3 thin films using alkaline solutions.
Arzhang Mani, Mohammad Nikfalazar, Falk Muench, Aldin Radetinac, Yuliang Zheng, Alex Wiens, Sergiy Melnyk, Holger Maune, Lambert Alff, Rolf Jakoby, Philipp Komissinskiy   +10 more
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Investigation of etch characteristics of non-polar GaN by wet chemical etching

Applied Surface Science, 2010
Abstract We characterized the surface defects in a-plane GaN, grown onto r-plane sapphire using a defect-selective etching (DSE) method. The surface morphology of etching pits in a-plane GaN was investigated by using different combination ratios of H 3 PO 4 and H 2 SO 4 etching media.
Yan-Kuin Su, Shyh-Jer Huang, Hsiao-Chiu Hsu   +2 more
exaly   +2 more sources

Wet-chemical etching of III-V semiconductors

Philips Technical Review, 1988
Ill-V semiconductors like GaAs can be wet-chemically etched by three mechanisms: electrochemically with an external voltage source, electrochemically using an oxidizing agent (elec troless), and chemically with a reactive compound. In some cases the etching process only proceeds when the semiconductor is exposed to light.
Kelly, J.J., Meerakker, van de, J.E.A.M., Notten, P.H.L., Tijburg, R.P.   +3 more
openaire   +2 more sources

The surface roughening of GaN by wet chemical etching [PDF]

, 2015
Enhancing the light extraction efficiency is an important problem in the manufacturing of GaN-based LEDs. Many methods have been carried out to increase the external efficiency, including roughening the surface of the LED. In this study, we proposed an approach of wet chemical etching in KOH and K2S2O8 mixed solutions for roughening the surface of GaN.
Zasukhin, D. I., Kokhanenko, Andrey P., Kharapudchenko, Olga V., Karimbaev, D. D.   +3 more
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Wet chemical etching of AlN

Applied Physics Letters, 1995
Single-crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist developer solution, in which the active component is KOH. The etching is thermally activated with an activation energy of 15.5±0.4 kcal mol−1, and the etch rate is found to be strongly dependent on the crystalline quality of the AlN.
J. R. Mileham, S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. J. Shul, S. P. Kilcoyne   +5 more
openaire   +1 more source

Wet chemical etching technique for optical fibers [PDF]

, 1991
A wet chemical etching technique is disclosed for forming a lensed optical fiber. In particular, the fiber is placed in a mixture comprising buffered hydrofluoric acid (e.g., HF and NH4 F) and a treating agent comprising acetic acid or citric acid.
BLONDER GREG E, JOHNSTON BERTRAND HAROLD
core   +6 more sources