Results 251 to 260 of about 4,818,117 (298)
Controlling Etch Anisotropy of Crystalline Germanium Nanostructures. [PDF]
SmallSaidov K +5 more
europepmc +1 more source
Advanced manufacturing of fiber metal laminates: A review of fabrication strategies, interfacial control, and future outlook. [PDF]
Sci ProgHusain A, Mourad AI, Khan SH.
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Wet-chemical etching of SrMoO3 thin films [PDF]
Materials Letters, 2016 SrMoO3 is a perovskite oxide material with very high electrical conductivity, exhibiting great potential for integration into electronic devices. Here, we present a method for controlled wet-chemical etching of SrMoO3 thin films using alkaline solutions.
Falk Muench +2 more
exaly +3 more sources
Numerical simulation of wet-chemical etching [PDF]
, 2008 The concentration of dissolved material in an etch-hole is computed in order to construct a numerical simulation of wet-chemical etching. Using a number of assumptions an approximate convection-diffusion equation is formulated. In this way, analytical descriptions for the concentration in different parts of the domain are obtained.
Driesen, Cornelus Hendricus +3 more
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Investigation of etch characteristics of non-polar GaN by wet chemical etching
Applied Surface Science, 2010Abstract We characterized the surface defects in a-plane GaN, grown onto r-plane sapphire using a defect-selective etching (DSE) method. The surface morphology of etching pits in a-plane GaN was investigated by using different combination ratios of H 3 PO 4 and H 2 SO 4 etching media.
Yan-Kuin Su
exaly +2 more sources
Wet-chemical etching of III-V semiconductors [PDF]
Philips Technical Review, 1988 Ill-V semiconductors like GaAs can be wet-chemically etched by three mechanisms: electrochemically with an external voltage source, electrochemically using an oxidizing agent (elec troless), and chemically with a reactive compound. In some cases the etching process only proceeds when the semiconductor is exposed to light.
Kelly, J.J. +3 more
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The surface roughening of GaN by wet chemical etching [PDF]
, 2015 Enhancing the light extraction efficiency is an important problem in the manufacturing of GaN-based LEDs. Many methods have been carried out to increase the external efficiency, including roughening the surface of the LED. In this study, we proposed an approach of wet chemical etching in KOH and K2S2O8 mixed solutions for roughening the surface of GaN.
Zasukhin, D. I. +3 more
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Applied Physics Letters, 1995
Single-crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist developer solution, in which the active component is KOH. The etching is thermally activated with an activation energy of 15.5±0.4 kcal mol−1, and the etch rate is found to be strongly dependent on the crystalline quality of the AlN.
J. R. Mileham +5 more
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Single-crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist developer solution, in which the active component is KOH. The etching is thermally activated with an activation energy of 15.5±0.4 kcal mol−1, and the etch rate is found to be strongly dependent on the crystalline quality of the AlN.
J. R. Mileham +5 more
openaire +1 more source
Wet chemical etching technique for optical fibers [PDF]
, 1991 A wet chemical etching technique is disclosed for forming a lensed optical fiber. In particular, the fiber is placed in a mixture comprising buffered hydrofluoric acid (e.g., HF and NH4 F) and a treating agent comprising acetic acid or citric acid.
BLONDER GREG E, JOHNSTON BERTRAND HAROLD
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Wet Chemical Etching of Al0.5In0.5 P
Journal of The Electrochemical Society, 1995A number of new selective wet etching solutions for AlInP over GaAs and InGaP have been investigated. We find that in addition to HCl and Br 2 -MeOH, the following room temperature acids also etch AlInP lattice matched to GaAs : HF, HI, H 2 SO 4 , H 3 PO 4 and C 6 H 8 O 7 (citric acid).
J. W. Lee +5 more
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