Wet chemical etching - Open Access .click

Results 251 to 260 of about 5,716,928 (282)

Some of the next articles are maybe not open access.

Crystallographic Wet Chemical Etching of p-Type GaN

Journal of The Electrochemical Society, 2000
We demonstrate crystallographic wet chemical etching of p-type GaN with etch rates as high as 1.2 μm/min. Etchants used include molten KOH, KOH dissolved in ethylene glycol, aqueous tetraethylammonium hydroxide, and phosphoric acid (H 3 PO 4 ), at temperatures ranging from 90 to 260°C, The observed crystallographic p-GaN etch planes are (0001), (1010),
D. A. Stocker +4 more
openaire +1 more source

Etch pit formation on metal films by wet chemicals

Metals and Materials, 1999
It is well known that the voids formed on metal interconnects shorten their lifetimes substantially in VLSI by inducing electromigration. Voids are often found on metal films after stripping photoresist films on metal films. These voids turn out to be etch pits formed by wet chemicals attacking the necks of the hillocks of CuA12 and Si precipitates ...
openaire +1 more source

The studies on wet chemical etching via in situ liquid cell TEM

Ultramicroscopy, 2021
Qing Chen, Jiamin Tian
exaly

Wet Chemical Etching of InP for Cleaning Applications