Results 241 to 250 of about 5,716,928 (282)

Wet Chemical Etching of Al0.5In0.5 P

Journal of The Electrochemical Society, 1995
A number of new selective wet etching solutions for AlInP over GaAs and InGaP have been investigated. We find that in addition to HCl and Br 2 -MeOH, the following room temperature acids also etch AlInP lattice matched to GaAs : HF, HI, H 2 SO 4 , H 3 PO 4 and C 6 H 8 O 7 (citric acid).
J. W. Lee, S. J. Pearton, C. R. Abernathy, W. S. Hobson, F. Ren, C. S. Wu   +5 more
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Plasma and wet chemical etching of In0.5Ga0.5P

Journal of Electronic Materials, 1992
Dry and wet chemical etching of epitaxial In0, 5Ga0.5P layers grown on GaAs substrates by gas-source molecular beam epitaxy have been investigated. For chlorine-based dry etch mixtures (PCl3/Ar or CC12F2/Ar) the etching rate of InGaP increases linearly with dc self-bias on the sample, whereas CH4/H2-based mixtures produce slower etch rates ...
J. R. Lothian, J. M. Kuo, F. Ren, S. J. Pearton   +3 more
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Numerical simulation of wet-chemical etching

2008
The concentration of dissolved material in an etch-hole is computed in order to construct a numerical simulation of wet-chemical etching. Using a number of assumptions an approximate convection-diffusion equation is formulated. In this way, analytical descriptions for the concentration in different parts of the domain are obtained.
Driesen, Cornelus Hendricus, Kuerten, Johannes G.M., Kuiken, H.K., Zandbergen, P.J.   +3 more
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Crystallographic wet chemical etching of GaN

Applied Physics Letters, 1998
We demonstrate well-controlled crystallographic etching of wurtzite GaN grown on c-plane sapphire using H3PO4, molten KOH, KOH dissolved in ethylene glycol, and NaOH dissolved in ethylene glycol between 90 and 180 °C, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {101̄0}, {101̄ 1̄}, {101̄ 2̄}, and {101̄3}.
D. A. Stocker, E. F. Schubert, J. M. Redwing   +2 more
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The influence of the AlN film texture on the wet chemical etching

Microelectronics Journal, 2009
The influence of the aluminum nitride (AlN) film texture on the chemical etching in KOH solution was invested. The AlN films with the different texture and crystal quality were prepared by sputtering. It is found that the chemical etching behaviors, including the etch rate, the activation energy, the surface morphology and the anisotropy, are strongly ...
Da Chen, Jingjing Wang, Dong Xu, Yafei Zhang   +3 more
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Photo-enhanced chemical wet etching of GaN

Materials Science and Engineering: B, 2002
Abstract In this paper, we report a photo-enhanced chemical etch rate study on two GaN samples of differing structural and electrical quality as a function of the KOH or H3PO4 etch solution molarity. The etch rate of KOH was observed to be higher than that of H3PO4.
Ko, C. H., Su, Y. Y., Chang, Shoude, Lan, W. H., Webb, James, Tu, M. C., Cheng, Y. T.   +6 more
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Wet chemical etching of AlN in KOH solution

physica status solidi c, 2006
AbstractIn this work we investigated the influence of the AlN material quality on the etching rate in KOH‐based solutions. Thus, AlN layers were deposited by three different methods on sapphire and silicon substrates (i) by metal organic chemical vapor deposition (MOCVD), (ii) by molecular beam epitaxy (MBE), and (iii) by reactive sputter deposition ...
I. Cimalla, Ch. Foerster, V. Cimalla, V. Lebedev, D. Cengher, O. Ambacher   +5 more
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Opticalin situ monitoring of wet chemical etching

Surface and Interface Analysis, 1998
Optical in situ monitoring, exploiting the interference of monochromatic radiation reflected from the surface being chemically etched and from the deeper interfaces of semiconductor layers, was utilized to monitor the etch process of layered AlGaAs/AlAs/GaAs structures.
Ján Waclavek, Gabriel Krausko, Jaroslava Škriniarová   +2 more
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Light-induced wet-chemical etching of InP

Conference on Lasers and Electro-Optics, 1983
We have used Ar laser light at 5145 A to induce rapid localized etching of InP samples immersed in aqueous solutions of phosphoric acid. Unlike earlier reports of light-enhanced wet-chemical etching of various materials,1-3 we observe no etching of the samples in the absence of the intense light.
J. E. Bjorkholm, A. A. Ballman
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GaAs double heterostructure lasers fabricated by wet chemical etching

Journal of Applied Physics, 1976
GaAs double heterostructure lasers compatible with monolithic intergration of optical devices have been fabricated by wet chemical etching. Results for a variety of laser orientations are reported. External differential quantum efficiencies as high as 18% have been achieved, as well as threshold current densities as low as 4.2 kA/cm2.
J. L. Merz, R. A. Logan
openaire   +1 more source