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Review of wide band-gap semiconductors technology [PDF]
MATEC Web of Conferences, 2016 Silicon carbide (SiC) and gallium nitride (GaN) are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials.
Jin Haiwei +4 more
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Wide Band Gap Chalcogenide Semiconductors [PDF]
Chemical Reviews, 2020 Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent
Rachel Woods-Robinson +6 more
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IEEE Journal of the Electron Devices Society, 2021 We experimentally demonstrate ferroelectric-like non-volatile field-effect transistor (NVFET) with the amorphous Al2O3 gate insulator for artificial synapse applications.
Yue Peng +9 more
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ZnS/ZnO heterostructure semiconductor: A promising ionic liquid media approach without calcination [PDF]
Journal of Particle Science and Technology, 2022 ZnS is a wide band gap semiconductor with excellent optical and electrical properties whose electronic structure can be modified with other semiconductors.
Shabnam Sheshmani +3 more
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Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film
Nanoscale Research Letters, 2022 We demonstrate a non-volatile field-effect transistor (NVFET) with a 3-nm amorphous HfO2 dielectric that can simulate the synaptic functions under the difference and repetition of gate voltage (V G) pulses.
Yue Peng +5 more
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1 kW MHz Wideband Class E Power Amplifier
IEEE Open Journal of Power Electronics, 2022 Class E power amplifiers are widely used in high-frequency applications due to their simplicity and use of only one ground-referenced switch. However, Class E power amplifiers are usually tuned to operate at a fixed frequency due to their resonant nature.
Jiale Xu, Zikang Tong, Juan Rivas-Davila
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Correction to Wide Band Gap Chalcogenide Semiconductors [PDF]
Chemical Reviews, 2020 Author(s): Woods-Robinson, Rachel; Han, Yanbing; Zhang, Hanyu; Ablekim, Tursun; Khan, Imran; Persson, Kristin A; Zakutayev, Andriy | Abstract: The original version of the article contained a number of problems related to references that may lead to error propagation in the scientific literature.
Rachel Woods-Robinson +6 more
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Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3
AIP Advances, 2020 The fabrication of a single-crystal hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with HfSiON/Al2O3 bilayer dielectric has been carried out. HfSiON and Al2O3 layers were deposited by sputtering-deposition (SD) and
Jibran Hussain +5 more
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IET Power Electronics, 2023 Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switching frequencies, and
Bufan Shi +6 more
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Limits to Doping of Wide Band Gap Semiconductors [PDF]
Chemistry of Materials, 2013 The role of defects in materials is one of the long-standing issues in solid-state chemistry and physics. On one hand, intrinsic ionic disorder involving stoichiometric amounts of lattice vacancies and interstitials is known to form in highly ionic crystals. There is a substantial literature on defect formation and the phenomenological limits of doping
Aron Walsh +10 more
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