Results 21 to 30 of about 13,430 (257)

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

AIP Advances, 2015
The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs.
Liefeng Feng, Xiufang Yang, Yang Li, Ding Li, Cunda Wang, Dongsheng Yao, Xiaodong Hu, Hongru Li   +7 more
doaj   +1 more source

Band Gap Tuning in Transition Metal and Rare-Earth-Ion-Doped TiO₂, CeO₂, and SnO₂ Nanoparticles

Nanomaterials, 2022
The energy gap Eg between the valence and conduction bands is a key characteristic of semiconductors. Semiconductors, such as TiO2, SnO2, and CeO2 have a relatively wide band gap Eg that only allows the material to absorb UV light.
Iliana Apostolova, Angel Apostolov, Julia Wesselinowa   +2 more
doaj   +1 more source

Electronic materials with a wide band gap: recent developments

IUCrJ, 2014
The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV) after World War II.
Detlef Klimm
doaj   +1 more source

A Review on Oxygen-Deficient Titanium Oxide for Photocatalytic Hydrogen Production

Metals, 2023
Photocatalytic technology based on the specific band structure of semiconductors offers a promising way to solve the urgent energy and environmental issues in modern society.
Yan Chen, Xiuli Fu, Zhijian Peng
doaj   +1 more source

Photocatalytic Applications of ReS₂-Based Heterostructures

Molecules, 2023
ReS2-based heterostructures, which involve the coupling of a narrow band-gap semiconductor ReS2 with other wide band-gap semiconductors, have shown promising performance in energy conversion and environmental pollution protection in recent years.
Nan Wang, Yashu Li, Lin Wang, Xuelian Yu
doaj   +1 more source

Electron–phonon effects and temperature-dependence of the electronic structure of monoclinic β-Ga2O3

APL Materials, 2023
Gallium oxide (Ga2O3) is a promising semiconductor for next-generation high-power electronics due to its ultra-wide bandgap and high critical breakdown field.
Channyung Lee, Nathan D. Rock, Ariful Islam, Michael A. Scarpulla, Elif Ertekin   +4 more
doaj   +1 more source

Mechanochemical Synthesis and Characterization of Nanostructured ErB4 and NdB4 Rare‐Earth Tetraborides

Advanced Engineering Materials, Volume 27, Issue 6, March 2025.
ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur, Faruk Kaya, Bora Derin, Mustafa Lütfi Öveçoğlu, Ju Li, Duygu Ağaoğulları   +5 more
wiley   +1 more source

Nanoindentation Criteria for Combinatorial Thin Film Libraries

Advanced Engineering Materials, EarlyView.
Thin‐film material libraries are compositional spreads used for screening composition‐structure‐property relationships. Nanoindentation is often used to characterize mechanical behavior across these systems, however variations in methodology are widespread.
Andre Bohn, Adie Alwen, Andrea M. Hodge
wiley   +1 more source

Study on Electrical and Temperature Characteristics of β-Ga₂O₃-Based Diodes Controlled by Varying Anode Work Function

Nanomaterials
This study systematically investigates the effects of anode metals (Ti/Au and Ni/Au) with different work functions on the electrical and temperature characteristics of β-Ga2O3-based Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs)
Yunlong He, Baisong Sheng, Xiaoli Lu, Guran Chen, Peng Liu, Ying Zhou, Xichen Wang, Weiwei Chen, Lei Wang, Jun Yang, Xuefeng Zheng, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source

A Single Stage Common Ground Three-Level PV Inverter With Integrated Power Decoupling

IEEE Open Journal of Power Electronics, 2020
In this paper, a T-type common ground transformer-less single phase inverter with dynamic swing of the dc-link voltage is presented for photovoltaic (PV) application. The topology is a combination of a bi-directional, partial-power-processing boost stage
Yinglai Xia, Jinia Roy, Raja Ayyanar
doaj   +1 more source