Results 31 to 40 of about 13,430 (257)
IEEE Open Journal of Power Electronics, 2022 Next-generationVariable Speed Drive (VSD) systems utilize SiC MOSFETs to achieve both high efficiency through reduced bridge-leg losses and high power density through an order-of-magnitude increase in switching frequency or reduction of the DC-link ...
Michael Haider +5 more
doaj +1 more source
3D‐Printed Giant Magnetoresistive (GMR) Sensors Based on Self Compliant Springs
Advanced Engineering Materials, EarlyView.This work explores 3D‐printed GMR sensors utilizing self‐compliant spring structures and conductive PLA composites. By optimizing arm width, we achieved high piezoresistive (0.34%/mm) and magnetoresistive (0.77%/mT) sensitivities. Demonstrated through Bluetooth‐integrated pressure and magnetic position sensing, these full printed low‐cost, customizable
Josu Fernández Maestu +4 more
wiley +1 more source
Electrical Conductivities of Conductors, Semiconductors, and Their Mixtures at Elevated Temperatures
Advanced Engineering Materials, EarlyView.This article presents a comprehensive review of temperature‐dependent electrical conductivity data for multiple material classes at elevated temperatures, highlighting a persistent conductivity gap between metals and semiconductors in the range of 102$\left(10\right)^{2}$– 107$\left(10\right)^{7}$ S/m. Metal–ceramic irregular metamaterials are proposed
Valentina Torres Nieto, Marcia A. Cooper
wiley +1 more source
Advances in Condensed Matter Physics, 2014 Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole)
Valeri V. Afanas'ev
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Advanced Functional Materials, EarlyView.A buried‐junction DSPEC design is introduced that leverages cascade charge transfer to enhance efficiency, stability, and versatility. This approach facilitates effective charge transfer and minimizes recombination losses, leading to significant improvements.
Jun‐Hyeok Park +8 more
wiley +1 more source
Wide band-gap power semiconductor devices
IET Circuits, Devices & Systems, 2007 The recent progress in the development of high-voltage SiC, GaN and diamond power devices is reviewed. Topics covered include the performance of various rectifiers and switches, material and process technologies of these wide band-gap semiconductor devices and future trends in device development and industrialisation.
openaire +1 more source
Advanced Functional Materials, EarlyView.The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu +2 more
wiley +1 more source
CES Transactions on Electrical Machines and Systems, 2017 Citations Keywords Metrics Abstract: The rapid pace of change in the wide band gap (WBG) power semiconductor area has led to an explosion in potential uses for WBG devices in a huge variety of applications.
Peter R. Wilson
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IET Power Electronics, 2023 This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half‐bridge DC‐DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement‐mode GaN MIS‐HEMTs process.
Miao Cui +10 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing +9 more
wiley +1 more source