Results 61 to 70 of about 13,430 (257)

Multiband Switchable Microwave Absorbing Metamaterials Based on Reconfigurable Kirigami–Origami

Advanced Functional Materials, EarlyView.
A reconfigurable metamaterial featuring tunable microwave‐absorbing and load‐bearing performance is proposed. Stretchable kirigami and bistable origami configurations are integrated as actuating components, and the synergistic deformation mechanisms are systematically analyzed.
Weimin Ding, Zhong Zhang, Zeang Zhao, Shengyu Duan, Panding Wang, Xiaogang Guo, Hongshuai Lei, Daining Fang   +7 more
wiley   +1 more source

Wide Band Gap Semiconductors for Automotive Applications

IEEE Electron Device Letters
  +13 more sources

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

IET Power Electronics
Silicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising option for pulsed power applications; however, the formation of high di/dt has been constrained by the slow current rise transient phase and the turn‐on current heterogeneity ...
Hangzhi Liu, Shiwei Liang, Yuming Zhou, Jun Wang   +3 more
doaj   +1 more source

Near‐Infrared Organic Photovoltaic Electrodes for Subretinal Neurostimulation

Advanced Functional Materials, EarlyView.
Organic photovoltaic electrodes based on the D18:Y6 blend enable precise and light‐controlled activation of retinal ganglion cells in a degenerating retina. NIR Light‐driven activation of retinal ganglion cells, tunable stimulation parameters, and biocompatibility with human retinal organoids highlight their potential for next‐generation prosthetics ...
Andrea Corna, Katarina Gugujonovic, Manuela Schiek, Alessandro Bellapianta, Paul Werginz, Amelie Ziller, Markus Clark Scharber, Ahmad Salti, Matthias Bolz, Mihai Irimia‐Vladu, Günther Zeck   +10 more
wiley   +1 more source

Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection

Electronics Letters
We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐
Sandeep K. Chaudhuri, Ritwik Nag, Utpal N. Roy, Ralph B. James, Krishna C. Mandal   +4 more
doaj   +1 more source

Electron–phonon coupling in semiconductors within the GW approximation

New Journal of Physics, 2018
The magnitude of the renormalization of the band gaps due to zero-point motions of the lattice is calculated for 18 semiconductors, including diamond and silicon.
Ferenc Karsai, Manuel Engel, Espen Flage-Larsen, Georg Kresse   +3 more
doaj   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures

Metrology and Measurement Systems, 2014
The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties.
Struk Przemysław, Pustelny Tadeusz, Gołaszewska Krystyna, A. Borysiewicz Michał, Kamińska Eliana, Wojciechowski Tomasz, Piotrowska Anna   +6 more
doaj   +1 more source

Reducing Open‐Circuit Voltage Losses in Wide‐Bandgap FAPbBr3 Perovskite Solar Cells for Continuous Unassisted Light‐Driven Water Splitting

Advanced Functional Materials, EarlyView.
The combination of formamidinium thiocyanate and 1,3‐propane diammonium iodide for bulk and top‐surface passivation, and a ternary fullerene blend to improve energy band alignment, suppresses energy losses in wide‐bandgap FAPbBr3 perovskite solar cells.
Laura Bellini, Daniël Grosfeld, Bruno Branco, Guus J. W. Aalbers, Lana M. Kessels, Willemijn H. M. Remmerswaal, Nicolas Daub, Kunal Datta, Martijn M. Wienk, René A. J. Janssen   +9 more
wiley   +1 more source

Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC

IET Power Electronics
This article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On this results,
Lukas Bergmann, Mark‐M. Bakran
doaj   +1 more source