Results 151 to 160 of about 397 (208)
Reprogramming tumor cells with LCOR mRNA nanotherapy to enhance immunotherapy
LCOR (Ligand‐dependent corepressor) mRNA encapsulated in polymeric nanoparticles restores LCOR activity in tumor cells, constraining aggressive tumor cell states and increasing tumor immunogenicity. This reprogramming makes tumor cells more vulnerable to T‐cell attack and enhances their response to immune‐checkpoint immunotherapy.
Gabriel Serra‐Mir +9 more
wiley +1 more source
Spatial heterogeneity of hotspot mutations and clonal relatedness in ovarian endometrioid carcinoma
Spatially resolved analysis revealed heterogeneous distributions of selected cancer‐associated mutations within ovarian endometrioid carcinomas. Shared mutations between paired endometrial and ovarian tumors supported clonal relatedness. These findings highlight the value of sampling multiple tumor regions when interpreting molecular profiles ...
Takahito Ashihara +10 more
wiley +1 more source
Tumour‐proximal deep serum proteomics identifies biomarkers associated with ovarian cancer
New biomarkers are needed for early ovarian cancer detection. Ovarian (tumour‐proximal) and peripheral vein serum from healthy women and patients with benign or malignant tumours underwent nanoparticle‐enriched deep proteomics. Ovarian serum yielded more protein identifications and revealed tumour‐reflective signatures.
Darren Lau +9 more
wiley +1 more source
openaire +1 more source
Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies [PDF]
This paper, for the first time, estimates the influences of the intrinsic-parameter fluctuations consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and random-dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field-effect transistors (MOSFETs) and circuits.
Yiming Li +2 more
exaly +2 more sources
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Journal of Vacuum Science & Technology B, 2001
The relation between the work function and current fluctuation was investigated for various kinds of emitters: element metals, transition metal nitrides, and diamonds. Since these deposited emitters have no good standard, it is difficult to distinguish the effect of work function and the other physical parameters such as apex radius.
Y Gotoh, J Ishikawa
exaly +2 more sources
The relation between the work function and current fluctuation was investigated for various kinds of emitters: element metals, transition metal nitrides, and diamonds. Since these deposited emitters have no good standard, it is difficult to distinguish the effect of work function and the other physical parameters such as apex radius.
Y Gotoh, J Ishikawa
exaly +2 more sources
Work-Function Fluctuation Impact on the SET Response of FinFET-based Majority Voters
2020 IEEE Latin-American Test Symposium (LATS), 2020The evolution of integrated circuits, alongside the technology scaling, has made them more susceptible to the radiation effects, as well presenting an increasing manufacturing process variability. These challenges can lead to circuits operating outside their specification ranges. Majority voters are adopted by most of the redundancy-based methodologies
Leonardo Heitich Brendler +3 more
openaire +2 more sources
Fluctuation analysis of work function of organic semiconductors
Collection of Czechoslovak Chemical Communications, 2011We demonstrate, for the first time, work function fluctuations of a polyaniline film when used as the gate conductor of an insulated-gate field-effect transistor. The work function fluctuations induce drain current fluctuations, which are in excess of the channel noise of the transistor and the Nyquist noise of the polyaniline film.
Ryan M. West +3 more
openaire +1 more source
Impact of Work Function Fluctuations on Threshold Voltage Variability in a Nanoscale FinFETs
2016 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS), 2016In todays advanced nanoscale regime, use of metal gate stacks have a different impact on the intrinsic parameter variability. The metal gates have a natural granular structure, where work function of each grain depends upon its orientation. Circuit and device designing are limited by the threshold voltage variability.
Rituraj Singh Rathore +2 more
openaire +2 more sources
Random-work-function-induced characteristic fluctuation in 16-nm-gate bulk and SOI FinFETs
International Journal of Nanotechnology, 2014In this paper, we, for the first time, study the metal gate's work-function-fluctuation-induced variability in the 16-nm-gate bulk and silicon on insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. According to metal's property, random nanosized grains of titanium nitride (TiN) gate
Yiming Li, Chieh Yang Chen, Yu Yu Chen
+4 more sources

