Results 171 to 180 of about 397 (208)
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Personality and Individual Differences, 2021
Abstract Work-related risk propensity (WRP), refers to an individual's risk-taking tendencies at the workplace, has been widely recognized as an essential predictor for individual performance. However, the neurofunctional substrates of WRP remain unclear. To fill this gap, we combined the fractional amplitude of low-frequency fluctuations (fALFF) and
Zhengqiang Zhong, Han Ren, Fumin Deng
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Abstract Work-related risk propensity (WRP), refers to an individual's risk-taking tendencies at the workplace, has been widely recognized as an essential predictor for individual performance. However, the neurofunctional substrates of WRP remain unclear. To fill this gap, we combined the fractional amplitude of low-frequency fluctuations (fALFF) and
Zhengqiang Zhong, Han Ren, Fumin Deng
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IEEE Transactions on Semiconductor Manufacturing, 2012
In this paper, we estimate the effect of random work function (WK) on the threshold voltage fluctuation (σVth) of 16-nm-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with metal-gate materials. To examine the random WK induced σVth, nanosized metal grains with different gate materials are considered in a large-scale statistical ...
Yiming Li, Hui-Wen Cheng
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In this paper, we estimate the effect of random work function (WK) on the threshold voltage fluctuation (σVth) of 16-nm-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with metal-gate materials. To examine the random WK induced σVth, nanosized metal grains with different gate materials are considered in a large-scale statistical ...
Yiming Li, Hui-Wen Cheng
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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2014
Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV.
T. Matsukawa +12 more
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Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV.
T. Matsukawa +12 more
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Semiconductor Science and Technology, 2020
Abstract In this paper, process variability such as random dopant fluctuation (RDF), work function variation (WFV), and oxide thickness variation (OTV) in 14 nm node junctionless (JL) FinFETs is investigated using the impedance field method (IFM).
Min Soo Bae, Ilgu Yun
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Abstract In this paper, process variability such as random dopant fluctuation (RDF), work function variation (WFV), and oxide thickness variation (OTV) in 14 nm node junctionless (JL) FinFETs is investigated using the impedance field method (IFM).
Min Soo Bae, Ilgu Yun
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IEEE Electron Device Letters, 2016
This letter reports an investigation of the impact of device scaling on the performance of a junctionless FinFET due to gate-metal work function variability (WFV) and random dopant fluctuations (RDFs). Such investigation is made by using a 3-D numerical device simulator.
Sk Masum Nawaz, Abhijit Mallik
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This letter reports an investigation of the impact of device scaling on the performance of a junctionless FinFET due to gate-metal work function variability (WFV) and random dopant fluctuations (RDFs). Such investigation is made by using a 3-D numerical device simulator.
Sk Masum Nawaz, Abhijit Mallik
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2019 IEEE Conference on Information and Communication Technology, 2019
This study presents the behavior of fully depleted silicon-on-insulator (FD-SOI) MOSFET by variation of channel doping concentration and work function of gate material. The channel doping concentration and work function of gate material are varied from 1012to 1019 cm-3and 4.4 to 4.8eV respectively. The investigation is presented for 5nm of silicon film
Avaneesh K. Dubey +4 more
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This study presents the behavior of fully depleted silicon-on-insulator (FD-SOI) MOSFET by variation of channel doping concentration and work function of gate material. The channel doping concentration and work function of gate material are varied from 1012to 1019 cm-3and 4.4 to 4.8eV respectively. The investigation is presented for 5nm of silicon film
Avaneesh K. Dubey +4 more
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2010 IEEE International Conference on Semiconductor Electronics (ICSE2010), 2010
The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σI off / σI on are drawn; the device with high AR and large number of silicon fin can suppress the WKF.
Hui-Wen Cheng, Yiming Li
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The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σI off / σI on are drawn; the device with high AR and large number of silicon fin can suppress the WKF.
Hui-Wen Cheng, Yiming Li
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2013
One of the major challenges that technology evolution has been facing in the last few years is the increasing severity of variability associated with the discrete nature of charge and the atomicity of matter, which become relevant in aggressively scaled devices.
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One of the major challenges that technology evolution has been facing in the last few years is the increasing severity of variability associated with the discrete nature of charge and the atomicity of matter, which become relevant in aggressively scaled devices.
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Impact on Radiation Robustness of Gate Mapping in FinFET Circuits under Work-function Fluctuation
2023 IEEE International Symposium on Circuits and Systems (ISCAS), 2023Bernardo Borges Sandoval +6 more
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Japanese Journal of Applied Physics, 2014
Influence of work function variation (WFV) in metal gates (MGs) on fluctuation of sub-threshold drain current is investigated in detail by analyzing fluctuation of current–onset voltage (COV) for fin field-effect transistors (FinFETs) with polycrystalline TiN and amorphous TaSiN MGs.
Takashi Matsukawa +11 more
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Influence of work function variation (WFV) in metal gates (MGs) on fluctuation of sub-threshold drain current is investigated in detail by analyzing fluctuation of current–onset voltage (COV) for fin field-effect transistors (FinFETs) with polycrystalline TiN and amorphous TaSiN MGs.
Takashi Matsukawa +11 more
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