Results 181 to 190 of about 397 (208)

Random work function variation induced threshold voltage fluctuation in 16-nm bulk FinFET devices with high-k-metal-gate material

2010 14th International Workshop on Computational Electronics, 2010
Random work-function (WK) induced threshold voltage fluctuation (σV th ) in 16-nm TiN metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced σV th are studied ...
Hui-Wen Cheng, Yiming Li
openaire   +1 more source

Transfer learning approach to analyzing the work function fluctuation of gate-all-around silicon nanofin field-effect transistors

Computers and Electrical Engineering, 2022
Chandni Akbar, Yiming Li 0005, Wen-Li Sung   +2 more
openaire   +2 more sources

Significance of Work Function Fluctuations in SiGe/Si Hetero-Nanosheet Tunnel-FET at Sub-3 nm Nodes

IEEE Transactions on Electron Devices, 2022
Narasimhulu Thoti, Yiming Li, Wen-Li Sung   +2 more
openaire   +1 more source

A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2022
Wen-Li Sung, Yiming Li
openaire   +1 more source

Intelligent Modeling of Electrical Characteristics of Multi-Channel Gate All Around Silicon Nanosheet MOSFETs Induced by Work Function Fluctuation

2022 IEEE 22nd International Conference on Nanotechnology (NANO), 2022
Chandni Akbar, Yiming Li, Wen-Li Sung
openaire   +1 more source

Influence of work function variation in a metal gate on fluctuation of current-onset voltage for undoped-channel FinFETs

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, 2015
T. Matsukawa, Y.X. Liu, K. Endo, J. Tsukada, H. Yamauchi, Y. Ishikawa, S. O'uchi, W. Mizubayashi, H. Ota, S. Migita, Y. Morita, M. Masahara   +11 more
openaire   +1 more source

Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices

2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010
Chia-Hui Yu, Ming-Hung Han, Hui-Wen Cheng, Zhong-Cheng Su, Yiming Li, Hiroshi Watanabe   +5 more
openaire   +1 more source

Deep Learning Approach to Estimating Work Function Fluctuation of Gate-All-Around Silicon Nanosheet MOSFETs with A Ferroelectric HZO Layer

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022
Rajat Butola, Yiming Li, Sekhar Reddy Kola   +2 more
openaire   +1 more source

3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices

2010 International Electron Devices Meeting, 2010
null Hui-Wen Cheng, null Fu-Hai Li, null Ming-Hung Han, null Chun-Yen Yiu, null Chia-Hui Yu, null Kuo-Fu Lee, Yiming Li   +6 more
openaire   +1 more source

Local Number Fluctuations in Hyperuniform and Nonhyperuniform Systems: Higher-Order Moments and Distribution Functions

Physical Review X, 2021
Michael A Klatt, Jaeuk Kim, Salvatore Torquato   +2 more
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