Results 161 to 170 of about 397 (208)

Implications of Work-Function Fluctuation on Radiation Robustness of FinFET XOR Circuits

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2017
Traditional CMOS technology has reached its limit in the deep submicron era. Hence, advanced technology nodes require novel device structures and new materials to overcome the challenges faced when dealing with planar devices for nanocircuits. As technology scales down, the circuits are becoming more susceptible to the increase of the uncertainty ...
Y. Q. Aguiar, F. L. Kastensmidt, C. Meinhardt, L. Artola, G. Hubert, R. Reis   +5 more
openaire   +1 more source

SET response of FinFET-based majority voter circuits under work-function fluctuation

2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2017
This work evaluates the SET response of FinFET-based Majority Voter circuits under the process-variability impact of metal-gate Work-Function Fluctuation (WFF). Results show that SET pulsewidth is expected to increase under WFF effects. Moreover, results show that the relative standard deviation of the SET pulses can increase from 50% up to 80 ...
Y. Q. de Aguiar, Fernanda Lima Kastensmidt, Cristina Meinhardt, Ricardo A. L. Reis   +3 more
openaire   +2 more sources

Variability of Threshold Voltage Induced by Work-Function Fluctuation and Random Dopant Fluctuation on Gate-All-Around Nanowire nMOSFETs

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019
We advance the localized work-function fluctuation (LWKF) method to examine the variability of threshold voltage $(\mathrm{V}_{\mathrm{t}\mathrm{h}})$ induced by titanium nitride (TiN) metal-gate work-function fluctuation (WKF) and combined the WKF with the random dopant fluctuation (RDF) for various grain sizes on Si gate-all-around (GAA) nanowire (NW)
Wen-Li Sung, Min-Hui Chuang, Yiming Li
openaire   +1 more source

Variability analysis of the epitaxial layer TFET due to gate work function variation, random dopant fluctuation, and oxide thickness fluctuation using the statistical impedance field method

Semiconductor Science and Technology, 2022
Abstract In this paper, a comparative study on process variability considering work function variation (WFV), random dopant fluctuation (RDF), and oxide thickness fluctuation (OTF) in epitaxial layer tunnel field effect transistor (TFET) with SiGe source (SiGe-ETLTFET) is statistically analyzed using impedance field method (IFM) in ...
Radhe Gobinda Debnath, Srimanta Baishya
openaire   +1 more source

Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs

IEEE Transactions on Electron Devices, 2021
A machine learning (ML) aided device simulation of work function fluctuation (WKF) for 3-D multichannel gate-all-around silicon nanosheet MOSFET is presented. To establish the ML model, the random forest regressor (RFR) is explored to predict the characteristic variation of the explored device. The proposed ML-RFR algorithm for predicting the ${I} _{
Chandni Akbar, Yiming Li, Wen Li Sung
openaire   +1 more source

Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-Nm Gate-All-Around Silicon Nanowire MOSFET Devices

2015 IEEE International Electron Devices Meeting (IEDM), 2015
In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied.
Yiming Li
exaly   +2 more sources

Modeling of work-function fluctuation for 16 nm FinFET devices with TiN/HfSiON gate stack

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010
The work-function fluctuation (WKF) induced threshold voltage variability (σV th ) in 16-nm-gate bulk FinFET devices is for the first time explored and modeled by an experimentally validated Monte Carlo simulation approach. A comprehensive analysis of variability sources of FinFETs is first conducted to show the significance of WKF in reliability of ...
Chih-Hong Hwang, Yiming Li
openaire   +1 more source

Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects [PDF]

IEEE Transactions on Electron Devices, 2017
A new technique developed for the analysis of intrinsic sources of variability affecting the performance of semiconductor devices is presented. It is based on the creation of a fluctuation sensitivity map (FSM), which supplies spatial information about the source of variability affecting the device performance and reliability, providing useful advice ...
Guillermo Indalecio, Natalia Seoane, Karol Kalna, Antonio J. Garcia-Loureiro   +3 more
openaire   +3 more sources

Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain

Journal of Nanoscience and Nanotechnology, 2012
The random work-function (WK) induced threshold voltage fluctuation (sigmaVth) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach.
Yiming, Li, Hui-Wen, Cheng, Chi-Hong, Hwang   +2 more
openaire   +2 more sources

Investigation on Gate Capacitances Fluctuation Due to Work-Function Variation in Metal-Gate FinFETs

2017
This paper considers gate capacitance fluctuation due to work-function variation (WFV) in metal-gate Fin-type field-effect-transistors (FinFETs). The study shows that there exist correlations between gate trans-capacitance variations. Also, an analytical statistical model is presented to capture total gate capacitance variation based on the ...
Wei-feng Lü, Mi Lin, Haipeng Zhang 0003
openaire   +2 more sources