Results 11 to 20 of about 1,241,457 (136)
Dianci bileiqi, 2023 文章研究了烧结温度对SnO2压敏电阻微观结构和电学性能的影响。通过XRD和SEM观察到烧结温度对样品致密化和晶粒尺寸具有很大影响。通过C-V曲线、E-J曲线及复阻抗图谱计算各电学参数。当烧结温度为1 250℃时，样品的电压梯度为762.27 V/mm,非线性系数为36.59,泄漏电流为3.27μA/cm2。在烧结过程中，形成的氧空位和深层缺陷提高了界面态密度，进一步提高了势垒高度。晶界势垒的提高会提高非线性系数，减小泄漏电流。
孙冠岳 +3 more
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Dianci bileiqi, 2021 普遍认为,Bi2O3是ZnO电阻片形成晶界势垒及非线性伏安特性的基础,然而Bi元素对构成势垒的缺陷结构的作用机制仍不清楚。基于一种优化的介电谱,笔者研究了Bi2O3含量对现代直流ZnO电阻片本征点缺陷锌填隙和氧空位、非本征缺陷晶间相结构和界面态的作用机制。实验结果表明,Bi掺杂使得晶界势垒结构发育完善,所以掺入Bi元素后试样才具有优异的非线性特性。Bi2O3促进晶界氧传输和吸附,进而有效提升界面态密度,调控本征点缺陷浓度。特别地,Bi2O3掺杂量达到1.2 mol%时 ...
赵霞 +4 more
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Dianci bileiqi, 2023 在直流输电工程中，大地回线和金属回线转换是一项十分重要的操作，而转换开关两侧并联的氧化锌避雷器阀片对其过电压进行限制，确保其能转换成功。在转换开关实际工况中，氧化锌避雷器阀片承受的实际工况多数为长脉宽冲击电流。通过肖特基势垒理论以及离子迁移率对氧化锌避雷器阀片在40 ms长脉宽冲击电流下的老化规律进行研究，得出以下结论：1)长脉宽冲击电流下，U1 mA先略微下降再到平缓甚至一直保持不变，即说明电流分布集中势垒较高的晶界层单元链中，并对阀片整体晶界层起到均一化作用。2)随着脉冲次数的增加，500 ...
卢文浩 +6 more
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Rare Metals, Volume 45, Issue 6, June 2026.ABSTRACT Te‐free BiSbSe3 is a promising medium‐temperature thermoelectric (TE) material owing to its cost‐effectiveness and intrinsically low lattice thermal conductivity. However, its comparatively low electrical conductivity has severely hindered the optimization of TE performance.
Xiaowei Shi +10 more
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Rare Metals, Volume 45, Issue 6, June 2026.ABSTRACT Low‐temperature lithium‐metal batteries (LT‐LMBs) are increasingly pursued for higher energy density and extended cycle life, yet suffer from severely depressed interfacial Li+ desolvation/diffusion kinetics due to the enlarged solvation structures as well as organic electrolyte solidification, ultimately inducing much higher barriers to ...
Shikai Yin +14 more
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Rare Metals, Volume 45, Issue 5, May 2026.ABSTRACT The Janus structure of ZnIn2S4 (ZIS) endows it with an intrinsic built‐in electric field that effectively drives photogenerated charge separation. However, this very structure also renders the predominant (001) facet (In–S termination) catalytically inert due to its low electron density and high energy barrier for the hydrogen evolution ...
Qingao Zhou +8 more
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Rare Metals, Volume 45, Issue 3, March 2026.ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu +10 more
wiley +1 more source
Dianci bileiqi, 2023 研究了不同含量Ga3+掺杂对ZnO基压敏电阻微观结构，电学性能的影响。微观结构上，掺杂Ga3+没有对压敏电阻的相组成产生改变但抑制了氧化锌晶粒的生长，并使得尖晶石数量增多，尺寸减小；电学性能上，因为势垒下降和晶界电导率提高少量增加的Ga3+掺杂就显著增大了漏电流，降低了非线性，提高了压敏电阻的梯度。当Ga3+掺杂量增加到0.014 mol%时，压敏电阻在5 kA冲击下达到了最小残压比为1.72,此时电位梯度309.05 V/mm,非线性系数为18.0,漏电流为20μA。
江海波 +6 more
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Rare Metals, Volume 45, Issue 1, January 2026.ABSTRACT Vanadium oxides are deemed competitive cathode candidates for aqueous zinc‐ion batteries (AZIBs), benefited from their high theoretical capacity and multiple crystalline structures. However, the sluggish reaction kinetics, poor reversibility, and high solubility have hindered the practical application.
Xiaoyu Fan +7 more
wiley +1 more source
Dianci bileiqi, 2004 通过测量商用ZnO压敏陶瓷材料的泄漏电流I与绝对温度T,并利用场助热激发电流的表达式计算了势垒高度（活化能）,发现它低于平衡状态时的势垒高度。在深入分析在电场作用下晶界区域中电子传导过程的基础上,认为这是在电导过程中通过正偏势垒向晶界界面层中注入了大量电子,这些电子不仅填充了在平衡状态下尚未填充的电子陷阱（即表面态）,而且还会在界面层形成自由电子空间电荷,这些自由电子在越过反偏Schottky势垒时需要克服的就不是平衡状态时的势垒高度,显然应低于平衡状态时的势垒高度 ...
李盛涛, 邹晨, 刘辅宜
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