A Teaching-Learning Framework for Materials Characterization [PDF]
“Materials Characterization” is a broad discipline that plays a pivotal role in various scientific sectors and requires diversified training to provide learners with the necessary tools and skills for the investigation of materials’ structure ...
Chetehouna, M, Viola, G
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vPROBE: Variation aware post-silicon power/performance binning using embedded 3T1D cells [PDF]
, 2010 In this paper, we present an on-die post-silicon binning methodology that takes into account the effect of static and dynamic variations and categorizes every processor based on power/performance.The proposed scheme is composed of a discretization ...
Canal Corretger, Ramon +3 more
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3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence. [PDF]
Sci Rep, 2022 Lee SH +7 more
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Evolutionary Memory: Unified Random Access Memory (URAM) [PDF]
, 2010 Jin-Woo, Han, Yang-Kyu, Choi
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Metallization system as a part of thermal memory. [PDF]
Heliyon, 2023 Skvortsov AA +3 more
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Assessment of ion-sensitivity of Si3N4 based feedback field effect transistor using snap-back characteristics [PDF]
This work discusses the sensitivity response of a feedback field effect transistor-based ion sensor (ISFBFET). To precisely predict the sensing behavior, the Gouy-Chapman-Stern and site-binding methods are used as the principle models in a detailed TCAD ...
Ansari, Hasan Raaza +8 more
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Temperature-Dependent Electrical Characteristics of Silicon Biristor. [PDF]
Micromachines (Basel), 2023 Kim E, Lim D.
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Low-voltage feedback field effect transistor based ion-sensing: a novel and detailed investigation for energy-efficient pH sensor [PDF]
In this work, we present simulation-based results of a vertical nanowire feedback field effect transistor as an ion-sensor (ISFBFET) for accurate pH detection.
Bagga, Navjeet +5 more
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Study of fin-tunnel FETs with doped pocket as capacitor-less 1T DRAM
, 2014 Arnab Biswas, Adrian M. Ionescu
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높은 전류구동능력을 위한 Si/SiGe 물질을 가지는 터널링 전계효과 트랜지스터 [PDF]
, 2015 학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2015. 2. 박병국.For integrated circuits with highly-scaled complementary MOS (CMOS) technology, power dissipation problem has become an important issue since power per chip continues to increases and leakage power ...
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