Results 91 to 100 of about 11,706 (260)

A Unified Flash Memory Platform for Mode‐Adaptive and Robust AI Computation

open access: yesAdvanced Science, EarlyView.
A unified AND‐type flash memory platform enables both transistor‐mode and capacitor‐mode computing‐in‐memory operations within the same device structure. By selectively switching the sensing mode through peripheral reconfiguration, the platform provides adaptable trade‐offs between computational accuracy, robustness, and energy efficiency for AI ...
Dayeon Yu   +6 more
wiley   +1 more source

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability

open access: yesMicromachines
Three-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost.
Xuesong Zheng   +6 more
doaj   +1 more source

Gap‐Free Information Transfer in 4D‐STEM via Fusion of Complementary Scattering Channels

open access: yesAdvanced Science, EarlyView.
Fused Full‐Field STEM (FF‐STEM) is introduced as a 4D‐STEM imaging modality that combines direct ptychography with tilt‐corrected dark‐field reconstruction in a single acquisition. Fourier‐space fusion using Wiener‐type spectral weighting closes the low‐frequency contrast gap inherent to bright‐field methods, delivering gap‐free, dose‐efficient, near ...
Shengbo You   +15 more
wiley   +1 more source

A Phosphorylation‐Induced Micellization Switch in the Low‐Complexity Domain of TDP‐43

open access: yesAdvanced Science, EarlyView.
Phosphorylation of TAR DNA‐binding protein's 43 kDa (TDP‐43) low‐complexity domain by casein kinase 1 delta (CK1δ) acts as a molecular switch, redirecting its self‐assembly from macroscopic phase separation toward finite‐sized, spherical block‐copolymer micelles of ∼30 nm.
Rodrigo F. Dillenburg   +16 more
wiley   +1 more source

Electrode‐Engineered Dual‐Mode Multifunctional Lead‐Free Perovskite Optoelectronic Memristors for Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos   +4 more
wiley   +1 more source

Reliable and energy-efficient 3D NAND flash storage system design using run-time device and system interaction [PDF]

open access: yes, 2023
NAND Flash memory is a non-volatile solid-state data storage technology widely used in electronic devices such as smartphones, tablets, laptops, digital cameras, USB drives, solid-state drives (SSDs), autonomous vehicles, space applications, and data ...
Raquibuzzaman, Md
core   +1 more source

Investigation of Retention Noise for 3-D TLC NAND Flash Memory

open access: yesIEEE Journal of the Electron Devices Society, 2019
In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated.
Kunliang Wang   +3 more
doaj   +1 more source

Characterizing and Optimizing LDPC Performance on 3D NAND Flash Memories

open access: yesACM Transactions on Architecture and Code Optimization
With the development of NAND flash memories’ bit density and stacking technologies, while storage capacity keeps increasing, the issue of reliability becomes increasingly prominent. Low-density parity check (LDPC) code, as a robust error-correcting code, is extensively employed in flash memory.
Qiao Li 0001   +9 more
openaire   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Analysis of the Down-coupling phenomenon in 3D NAND flash memories [PDF]

open access: yes, 2020
LAUREA MAGISTRALELa tecnologia NAND flash rappresenta una delle principali soluzioni nel mercato delle memorie non volatili. La costante richiesta di performance migliori e un maggiore risparmio di spazio ha spinto le industrie di semiconduttori a ...
GIULIANINI, MATTIA
core  

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