Results 101 to 110 of about 11,706 (260)

An Erase Efficiency Boosting Strategy for 3D Charge Trap NAND Flash [PDF]

open access: yes, 2018
Owing to the fast-growing demands of larger and faster NAND flash devices, new manufacturing techniques have accelerated the down-scaling process of NAND flash memory.
Yu-Pei Liang   +5 more
core   +1 more source

Fast-Read Storage Performance by Thyristor Operation in 3-D Flash Memory

open access: yesIEEE Journal of the Electron Devices Society
In this work, we report the fast-read storage performance of thyristor operation in 3D flash memory. By forming a pseudo N+/P/N/P+ structure with the word line (WL) bias of 3D string cells, thyristor operation with steep switching characteristics and a ...
Tomoya Sanuki   +2 more
doaj   +1 more source

DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability

open access: yesJournal of Low Power Electronics and Applications, 2017
To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Sparsh Mittal   +2 more
doaj   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

수직 3D NAND Flash 메모리 신뢰성에 관한 전산모사 및 특성분석 [PDF]

open access: yes, 2020
DoctorTo overcome the limitations of scaling down in the 2D planar NAND flash memory, 3D vertical NAND flash memory attracted attention, and many researches and mass production were carried out.
오현관
core  

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

open access: yesAdvanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Integration of Redox‐Active Polyoxovanadate Clusters into PMMA: Structure, Nanoscale Organization and Multilevel Redox Switching

open access: yesAdvanced Electronic Materials, EarlyView.
Solvent‐processable polyoxovanadate–PMMA nanocomposites exhibit concentration‐dependent 2D and 3D organization on gold surfaces, while retaining multilevel redox switching at room temperature. These hybrids bridge nanoscale functionality and macroscopic measurement, establishing a versatile platform for hybrid molecular–polymer memory materials ...
Jonas Lorenz   +11 more
wiley   +1 more source

RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory

open access: yesIEEE Access, 2019
NAND flash memory is widely used in various computing systems. However, flash blocks can sustain only a limited number of program/erase (P/E) cycles, which are referred to as the endurance.
Ruixiang Ma   +5 more
doaj   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

open access: yesAdvanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki   +3 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

open access: yesAdvanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison   +4 more
wiley   +1 more source

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