Results 101 to 110 of about 73,522 (251)

Chemical Doping Engineering of Polarization and Topological Textures in van der Waals Ferroelectric CuInP2S6

Advanced Science, EarlyView.
Our work reports that Li⁺ doping in CuInP2S₆ induces coexistence of high‐ and low‐polarization states, which fosters a rich spectrum of topological polar textures, such as bubbles and labyrinth domains. An unconventional flexoelectric effect is also discovered, where strain gradients can mechanically manipulate these polarization states and their ...
Lei Gao, Wenhao Li, Fei Sun, Ziyi Zhou, Zhihao Shen, Jianwei Liang, He Jiang, Weiming Xiong, Weijin Chen, Xiaoyue Zhang, Yi Zhang, Xinzhi Liu, Yue Zheng   +12 more
wiley   +1 more source

RBER Aware Multi-Sensing for Improving Read Performance of 3D MLC NAND Flash Memory

IEEE Access, 2018
3D-multi-level cell (MLC) NAND flash memory adopts 3D stack technology and stores two bits per cell, leading to improved storage capacities, but sacrificing data reliability.
Meng Zhang, Fei Wu, Xubin Chen, Yajuan Du, Weihua Liu, Yahui Zhao, Jiguang Wan, Changsheng Xie   +7 more
doaj   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory

IEEE Access, 2019
NAND flash memory is widely used in various computing systems. However, flash blocks can sustain only a limited number of program/erase (P/E) cycles, which are referred to as the endurance.
Ruixiang Ma, Fei Wu, Meng Zhang, Zhonghai Lu, Jiguang Wan, Changsheng Xie   +5 more
doaj   +1 more source

Interplay Between Structure and Interfacial Interactions in Fe‐Gd Synthetic Ferrimagnets

Advanced Electronic Materials, EarlyView.
Synthetic ferrimagnets with nearly identical Gd–Fe compositions but different architectures and crystallinity were investigated by element‐resolved microscopy, structural analysis and atomistic spin simulations. The results show that Curie temperature and domain evolution are governed primarily by structural order and interface quality, demonstrating ...
Álvaro González‐García, Alejandro Álvarez‐Chico, Jairo Obando‐Guevara, Silvia Gallego, Unai Atxitia, Iulia Cojocariu, Matteo Jugovac, Tevfik Onur Menteş, Andrea Locatelli, Arantzazu Mascaraque, Miguel Ángel González‐Barrio   +10 more
wiley   +1 more source

Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures

Advanced Electronic Materials, EarlyView.
Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan, Hari Jayasankar, Salma Soliman, Priyankka Ravikumar, Lance Fernandes, Chinsung Park, Amrit Garlapati, Chengyang Zhang, Sanghyun Kang, Shimeng Yu, Suman Datta, Asif Khan, Mengkun Tian, Zheng Wang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Luca Larcher, Gaurav Thareja, Andrea Padovani   +21 more
wiley   +1 more source

Electrode‐Engineered Dual‐Mode Multifunctional Lead‐Free Perovskite Optoelectronic Memristors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos, Konstantinos Rogdakis, Konstantinos Chatzimanolis, Katerina Anagnostou, Emmanuel Kymakis   +4 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

A String-Select-Line Separation Patterning Scheme for Low Voltage and High-Speed Program Operation in 3D NAND Flash Memory With Separated Source-Line

IEEE Access
In this paper, we propose a novel String-Select-Line Separation Patterning (SSP) scheme designed for low voltage and high-speed program operation in 3D NAND flash memory structures with a separated Source-Line (SL).
Jae-Min Sim, Hakyeong Kim, Yun-Heub Song
doaj   +1 more source