Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays [PDF]
IEEE Journal of the Electron Devices Society, 2023 In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string ...
Gerardo Malavena +4 more
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Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory [PDF]
Micromachines, 2023 The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated.
Donghyun Go +6 more
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Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors [PDF]
Sensors, 2023 Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling,
Hanshui Fan +6 more
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Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory [PDF]
EngIn order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim +2 more
doaj +2 more sources
MoS2 Channel‐Enhanced High‐Density Charge Trap Flash Memory and Machine Learning‐Assisted Sensing Methodologies for Memory‐Centric Computing Systems [PDF]
Advanced ScienceDriven by the shift of artificial intelligence (AI) workloads to edge devices, there is a growing demand for nonvolatile memory solutions that offer high‐density, low‐power consumption, and reliability.
Ki Han Kim +7 more
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Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]
Scientific ReportsThis study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
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Advanced Intelligent Systems, 2023 Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho +8 more
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IEEE Journal of the Electron Devices Society, 2023 The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
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Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories
Micromachines, 2021 Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen +6 more
doaj +1 more source
Coding scheme for 3D vertical flash memory [PDF]
2015 IEEE International Conference on Communications (ICC), 2015 Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction. However, 3D vertical flash memory suffers from a new problem known as fast detrapping, which is a rapid charge loss problem. In this paper, we
Yongjune Kim 0001 +4 more
openaire +2 more sources