Results 41 to 50 of about 11,706 (260)
EXPRESS: Exploiting Energy–Accuracy Tradeoffs in 3D NAND Flash Memory for Energy-Efficient Storage [PDF]
The density and cost-effectiveness of flash memory chips continue to increase, driven by: (a) The continuous physical scaling of memory cells in a single layer; (b) The vertical stacking of multiple layers; and (c) Logical scaling through storing ...
Md Raquibuzzaman +2 more
core +1 more source
In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative ...
Jae-Min Sim +6 more
doaj +1 more source
Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory
In charge-trap (CT) three-dimensional (3D) NAND flash memory, the transition layer between Si3N4 CT layer and SiO2 tunneling layer is inevitable, and the defects in the transition layer are expected to cause both lateral and vertical charge loss.
Fei Wang +3 more
doaj +1 more source
Overview of Advanced 3D Charge-trapping Flash Memory Devices [PDF]
Although conventional floating gate (FG) Flash memory has already gone into the sub-30 nm node, the technology challenges are formidable beyond 20nm. The fundamental challenges include FG interference, few-electron storage caused statistical fluctuation,
Kuang-Yeu Hsieh +2 more
core +1 more source
Flash-Cosmos: In-Flash Bulk Bitwise Operations Using Inherent Computation Capability of NAND Flash Memory [PDF]
International audienceBulk bitwise operations, i.e., bitwise operations on large bit vectors, are prevalent in a wide range of important application domains, including databases, graph processing, genome analysis, cryptography, and hyper-dimensional ...
Park, Jisung +8 more
core +3 more sources
Exploiting Process Similarity of 3D Flash Memory for High Performance SSDs [PDF]
© 2019 Association for Computing Machinery.3D NAND flash memory exhibits two contrasting process characteristics from its manufacturing process. While process variability between different horizontal layers are well known, little has been systematically ...
Youngseop Shim +11 more
core +1 more source
Characterizing 3D Floating Gate NAND Flash [PDF]
As both NAND flash memory manufacturers and users are turning their attentions from planar architecture towards three-dimensional (3D) architecture, it becomes critical and urgent to understand the characteristics of 3D NAND flash memory.
Yue Zhu +7 more
core +1 more source
Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed.
Jun-Kyo Jeong +5 more
doaj +1 more source
Three-dimensional NAND flash memory with high carrier injection efficiency has been of great interest to computing in memory for its stronger capability to deal with big data than that of conventional von Neumann architecture.
Hongsheng Hu +8 more
doaj +1 more source
A Behavioral Compact Model of 3D NAND Flash Memory
We present a behavioral compact model of 3D NAND flash memory for integrated circuits and system-level applications. This model is easy to implement, computationally efficient, fast, accurate and effectively accounts for the different parasitic capacitance coupling effects applicable to the 3D geometry of the vertical channel Macaroni body charge-trap ...
Shubham Sahay, Dmitri B. Strukov
openaire +2 more sources

