Results 31 to 40 of about 73,895 (232)

Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory

IEEE Access, 2021
In charge-trap (CT) three-dimensional (3D) NAND flash memory, the transition layer between Si3N4 CT layer and SiO2 tunneling layer is inevitable, and the defects in the transition layer are expected to cause both lateral and vertical charge loss.
Fei Wang, Yuan Li, Xiaolei Ma, Jiezhi Chen   +3 more
doaj   +1 more source

3D-NAND flash memory based neuromorphic computing

Acta Physica Sinica, 2022
A neuromorphic chip is an emerging AI chip. The neuromorphic chip is based on non-Von Neumann architecture, and it simulates the structure and working principle of the human brain. Compared with non-Von Neumann architecture AI chips, the neuromorphic chips have significant improvement of efficiency and energy consumption advantages.
Yang-Yang Chen, Yu-Hui He, Xiang-Shui Miao, Dao-Hong Yang   +3 more
openaire   +1 more source

A novel gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance with disturbance-less program operation

Memories - Materials, Devices, Circuits and Systems, 2023
In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative ...
Jae-Min Sim, In-Ku Kang, Sung-In Hong, Changhan Kim, Changhyun Cho, Kyunghoon Min, Yun-Heub Song   +6 more
doaj   +1 more source

Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays

IEEE Journal of the Electron Devices Society, 2023
In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string ...
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni   +4 more
doaj   +1 more source

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

Micromachines, 2021
In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed.
Jun-Kyo Jeong, Jae-Young Sung, Woon-San Ko, Ki-Ryung Nam, Hi-Deok Lee, Ga-Won Lee   +5 more
doaj   +1 more source

Controlling the Carrier Injection Efficiency in 3D Nanocrystalline Silicon Floating Gate Memory by Novel Design of Control Layer

Nanomaterials, 2023
Three-dimensional NAND flash memory with high carrier injection efficiency has been of great interest to computing in memory for its stronger capability to deal with big data than that of conventional von Neumann architecture.
Hongsheng Hu, Zhongyuan Ma, Xinyue Yu, Tong Chen, Chengfeng Zhou, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +8 more
doaj   +1 more source

Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection. [PDF]

Nature
Xiang Y, Wang C, Liu C, Wang T, Jiang Y, Wang Y, Wang S, Zhou P.   +7 more
europepmc   +2 more sources

Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory

Micromachines, 2023
The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated.
Donghyun Go, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim, Jeong-Soo Lee   +6 more
doaj   +1 more source

Adaptive Pulse Programming Scheme for Improving the V_th Distribution and Program Performance in 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2021
For triple-level or quad-level 3D NAND flash memory, narrowing the Vth distribution of each state without influencing page program performance is one of the challenges.
Zhichao Du, Shuang Li, Yu Wang, Xiang Fu, Fei Liu, Qi Wang, Zongliang Huo   +6 more
doaj   +1 more source

Analysis of HBM Failure in 3D NAND Flash Memory

Electronics, 2022
Electrostatic discharge (ESD) events are the main factors impacting the reliability of NAND Flash memory. The behavior of human body model (HBM) failure and the corresponding physical mechanism of 3D NAND Flash memory are investigated in this paper. A catastrophic burn-out failure during HBM zapping is first presented. Analysis shows that NMOS fingers’
Biruo Song, Zhiguo Li, Xin Wang, Xiang Fu, Fei Liu, Lei Jin, Zongliang Huo   +6 more
openaire   +1 more source