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3D Charge Trap NAND Flash Memories
ECS Transactions, 2016This chapter starts off with 2 vertical channel architectures named BiCS (Bit Cost Scalable) and P-BiCS (Pipe-Shaped BiCS), respectively. BiCS was proposed for the first time by Toshiba in 2007, and another version called P-BiCS was presented in 2009 to improve retention, source selector performances and source line resistance.
Luca Crippa, Rino Micheloni
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3D Stacked NAND Flash Memories
2016Market request for bigger and cheaper NAND Flash memories triggers continuous research activity for cell size shrinkage. For many years, workarounds for all the scalability issues of planar Flash memories have been found. Some examples are the improved programming algorithms for controlling electrostatic interference between adjacent cells [6], and the
Rino Micheloni, Luca Crippa
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3D RRAM design and benchmark with 3d NAND FLASH
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014The monolithic 3D integration of resistive switching random access memory (RRAM) is one attractive approach to build high-density non-volatile memory. In this paper, the design considerations of 3D vertical RRAM architecture are presented from the device, circuit to system level. Due to the voltage drop and sneak path problem, the sub-array size of the
Pai-Yu Chen +3 more
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Characterization of Inter-Cell Interference in 3D NAND Flash Memory
IEEE Transactions on Circuits and Systems I: Regular Papers, 2021We characterize inter-cell interference in commercial three-dimensional NAND flash memory. By writing random data into 3D NAND and collecting sample means and sample variances of cell values corresponding to a particular set of input values in fixed relative neighboring cell locations, it is shown that the interference coming from any target cell ...
Sukkwang Park, Jaekyun Moon
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Etch Challenges for 3D NAND Flash Technology
ECS Meeting Abstracts, 2014Current 2D NAND scaling is approaching technology limitation in both lithography and device performance arena. To address the lithography challenges at the 1x nodes and the well-known scaling issues associated with planar NAND, 3D flash technology is being developed and is expected to greatly reduce the lithography burden albeit shifting it to ...
Anisul Haque Khan +4 more
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2015
Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
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Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
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Characteristics of Junctionless Charge Trap Flash Memory for 3D Stacked NAND Flash
Journal of Nanoscience and Nanotechnology, 2013The electrical characteristics of tunnel barrier engineered-charge trap flash (TBE-CTF) memory devices with junctionless (JL) source and drain (S/D) were investigated. The JL structure is composed of an n(+)-poly-Si based ultra-thin channel and S/D with identical doping concentrations.
Jinho, Oh +3 more
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3D NAND Flash Status and Trends
2022 IEEE International Memory Workshop (IMW), 2022Lars Heineck, Jin Liu
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Error Generation for 3D NAND Flash Memory
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2022Weihua Liu +4 more
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A cell current compensation scheme for 3D NAND FLASH memory
2015 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2015The 3D NAND, so-called vertical NAND has cell Vt degradation especially in low temperature, and it affects cell Vt distribution and shift when NAND operates. To solve this problem, the temperature compensation scheme by ATS(Analog Temp Sensor) using CTAT circuit has proposed.
Sungwook Choi +7 more
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