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Characteristics of Junctionless Charge Trap Flash Memory for 3D Stacked NAND Flash
Journal of Nanoscience and Nanotechnology, 2013The electrical characteristics of tunnel barrier engineered-charge trap flash (TBE-CTF) memory devices with junctionless (JL) source and drain (S/D) were investigated. The JL structure is composed of an n(+)-poly-Si based ultra-thin channel and S/D with identical doping concentrations.
Jinho, Oh +3 more
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2015
Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
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Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
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A cell current compensation scheme for 3D NAND FLASH memory
2015 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2015The 3D NAND, so-called vertical NAND has cell Vt degradation especially in low temperature, and it affects cell Vt distribution and shift when NAND operates. To solve this problem, the temperature compensation scheme by ATS(Analog Temp Sensor) using CTAT circuit has proposed.
Sungwook Choi +7 more
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3D NAND Flash Status and Trends
2022 IEEE International Memory Workshop (IMW), 2022Lars Heineck, Jin Liu
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Error Generation for 3D NAND Flash Memory
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2022Weihua Liu +4 more
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Optimization of Performance and Reliability in 3D NAND Flash Memory
IEEE Electron Device Letters, 20203D NAND Flash with high storage capacity is in great demand for several technologies, which requires high performance and good reliability at the same time. Therefore, it is proposed to adjust the tunnel layer by changing the first SiO2 (O1) layer thickness near poly Si channel in the tunnel layer based on SiO2/SiOxNy/SiO2 structure.
Yingjie Ouyang +5 more
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3D Floating Gate NAND Flash Memories
2016Planar NAND Flash memories (commercially available) are based on Floating Gate, which has been developed and engineered for many decades. Therefore, there have been many attempts to develop 3D Floating Gate cells in order to re-use all the know-how cumulated over time.
Rino Micheloni, Luca Crippa
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Study on cell shape in 3D NAND flash memory
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015All kinds of cell structures are appeared in 3D NAND flash technologies and all seem to be promising. In this paper, detail comparisons among the cell structures of them are presented. The theoretical derivation and simulation results both support that the cylindrical cell structure has better program/erase speed and memory window.
Wei Feng, Nine Deng
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The application of e beam inspection on 3D NAND flash
2012 e-Manufacturing & Design Collaboration Symposium (eMDC), 2012Various three-dimensional (3D) multilayer stacks NAND flash architectures are developed by several companies, the defect performance monitoring under such complicated architectures has become a new challenge in 3D NAND flash. The aim of this paper is to illustrate e beam inspection system can monitor the tiny, invisible defects and electrical defects ...
Hsiang-Chou Liao +11 more
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3D-NAND Flash and Its Manufacturing Process
2016Flash memory chips are nonvolatile memory (NVM) chips, which can keep memory without power supply. In comparison, DRAM is volatile memory and needs a power supply. Flash memory chips, especially NAND flash memory chips, are commonly used in universal serial bus (USB) drives, secure digital (SD) cards, and SSDs.
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