Results 101 to 110 of about 2,098 (165)

New-Generation Ferroelectric AlScN Materials. [PDF]

Nanomicro Lett
Zhang Y, Zhu Q, Tian B, Duan C.
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Physics of 2D Materials for Developing Smart Devices. [PDF]

Nanomicro Lett
Goel N, Kumar R.
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Hardware implementation of memristor-based artificial neural networks. [PDF]

Nat Commun
Aguirre F, Sebastian A, Le Gallo M, Song W, Wang T, Yang JJ, Lu W, Chang MF, Ielmini D, Yang Y, Mehonic A, Kenyon A, Villena MA, Roldán JB, Wu Y, Hsu HH, Raghavan N, Suñé J, Miranda E, Eltawil A, Setti G, Smagulova K, Salama KN, Krestinskaya O, Yan X, Ang KW, Jain S, Li S, Alharbi O, Pazos S, Lanza M.   +30 more
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Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices. [PDF]

J Phys Chem Lett
Kim SY, Zhang H, Rubio-Magnieto J.
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Molecular HDD logic for encrypted massive data storage. [PDF]

Nat Commun
Guo B, Chen X, Chen A, Wang J, Xue W, Wang T, Wu Z, Zhong X, Zeng J, Li J, Li M, Xu X, Chen Y, Liu G.   +13 more
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α-CsPbI₃ Quantum Dots ReRAM with High Air Stability Working by Valance Change Filamentary Mechanism. [PDF]

Small Methods
Lee DE, Im IH, Baek JH, Kwak KJ, Kim SJ, Lee TH, Kim JY, Jang HW.   +7 more
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A ferroelectric fin diode for robust non-volatile memory. [PDF]

Nat Commun
Feng G, Zhu Q, Liu X, Chen L, Zhao X, Liu J, Xiong S, Shan K, Yang Z, Bao Q, Yue F, Peng H, Huang R, Tang X, Jiang J, Tang W, Guo X, Wang J, Jiang A, Dkhil B, Tian B, Chu J, Duan C.   +22 more
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3D Charge Trap NAND Flash Memories

ECS Transactions, 2016
This chapter starts off with 2 vertical channel architectures named BiCS (Bit Cost Scalable) and P-BiCS (Pipe-Shaped BiCS), respectively. BiCS was proposed for the first time by Toshiba in 2007, and another version called P-BiCS was presented in 2009 to improve retention, source selector performances and source line resistance.
Luca Crippa, Rino Micheloni
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Microscopic Physical Origin of Charge Traps in 3D NAND Flash Memories

Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials, 2022
Abstract We performed the first-principles calculations for a nitrogen vacancy (V N) and hydrogen(H) atom in β-Si3N4 to clarify the atomistic origin of charge traps in silicon nitride (SiN) layers and charge-trapping mechanism used for 3D NAND flash memories.
Fugo Nanataki, Jun-Ichi Iwata, Kenta Chokawa, Masaaki Araidai, Atsushi Oshiyama, Kenji Shiraishi   +5 more
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