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3D-NAND Flash memory and technology
2019This chapter introduces the design of three-dimensional (3D) NAND flash memory with the implications from the system side. For conventional two-dimensional (2D) scaling, it is facing various limitations such as lithography cost and cell-to-cell coupling interference. To sustain the trend of bit-cost reduction beyond 10 nm technology node, 3D NAND flash
Chao Sun, Ken Takeuchi
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Characterization of Inter-Cell Interference in 3D NAND Flash Memory
IEEE Transactions on Circuits and Systems I: Regular Papers, 2021We characterize inter-cell interference in commercial three-dimensional NAND flash memory. By writing random data into 3D NAND and collecting sample means and sample variances of cell values corresponding to a particular set of input values in fixed relative neighboring cell locations, it is shown that the interference coming from any target cell ...
Suk Kwang Park, Jaekyun Moon
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3D Floating Gate NAND Flash Memories
2016Planar NAND Flash memories (commercially available) are based on Floating Gate, which has been developed and engineered for many decades. Therefore, there have been many attempts to develop 3D Floating Gate cells in order to re-use all the know-how cumulated over time.
Rino Micheloni, Luca Crippa
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Reliability of 3D NAND Flash Memories
2016In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical ...
GROSSI, Alessandro +2 more
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Study on cell shape in 3D NAND flash memory
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015All kinds of cell structures are appeared in 3D NAND flash technologies and all seem to be promising. In this paper, detail comparisons among the cell structures of them are presented. The theoretical derivation and simulation results both support that the cylindrical cell structure has better program/erase speed and memory window.
Wei Feng, Nine Deng
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Secondary Particles Generated by Protons in 3-D nand Flash Memories
IEEE Transactions on Nuclear Science, 2022We studied the secondary byproducts created by high-energy protons inside an SEU detector based on 3D NAND Flash memories, extending the previously developed methodology used for detecting heavy ions. The radiation response of the SEU monitor was discussed as a function of proton energy, analyzing parameters such as the number of clusters per particle,
M. Bagatin +8 more
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Optimization of Performance and Reliability in 3D NAND Flash Memory
IEEE Electron Device Letters, 20203D NAND Flash with high storage capacity is in great demand for several technologies, which requires high performance and good reliability at the same time. Therefore, it is proposed to adjust the tunnel layer by changing the first SiO2 (O1) layer thickness near poly Si channel in the tunnel layer based on SiO2/SiOxNy/SiO2 structure.
Yingjie Ouyang +5 more
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3D VG-Type NAND Flash Memories
2016The common feature among the different 3D NAND solutions is constituted by very deep vertical (z direction) etching steps that define the Flash cells geometries simultaneously. Transistor geometries are formed by the deep trench through a multiple polysilicon/oxide stack.
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Natural Local Self-Boosting Effect in 3D NAND Flash Memory
IEEE Electron Device Letters, 2017This letter examined the natural local self-boosting effect of an inhibited channel in three-dimensional (3D) NAND flash memory. The inhibited channel in the 3D NAND flash structure can be in the floating state easily, because its channel is not connected directly to its substrate.
Myounggon Kang, Yoon Kim
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FPGA-based reliability testing and analysis for 3D NAND flash memory
Microelectronics Reliability, 2020Abstract In this article, we described a FPGA-based NAND flash memory hardware and software collaborative design experimental platform. Our novel experimental platform implements timing control and error feature extraction of NAND flash memory, equipped with a computer software based on LabVIEW.
Debao Wei +4 more
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