Results 11 to 20 of about 2,113 (167)
Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
Computers, 2017 We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Alessandro S. Spinelli +2 more
doaj +3 more sources
Self-Learning Hot Data Prediction: Where Echo State Network Meets NAND Flash Memories [PDF]
, 2020 © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new ...
Ai, Jiaqiu +4 more
core +2 more sources
Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories
IEEE Journal of the Electron Devices Society, 2021 The tapered channel effect is a major concern in three-dimensional (3-D) NAND technology because the effect causes differences in the electrical characteristics, including the threshold voltage (VT), between the upper and the lower cells.
Jun Gyu Lee +4 more
doaj +1 more source
Future Internet, 2023 Solid-state drives represent the preferred backbone storage solution thanks to their low latency and high throughput capabilities compared to mechanical hard disk drives.
Michela Borghesi +3 more
doaj +1 more source
Channel Modeling and Quantization Design for 3D NAND Flash Memory
Entropy, 2023 As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers. However, the new architecture of 3D flash memory leads to new sources of errors, which severely affects the reliability ...
Cheng Wang +5 more
openaire +3 more sources
3D-NAND flash memory based neuromorphic computing
Acta Physica Sinica, 2022 A neuromorphic chip is an emerging AI chip. The neuromorphic chip is based on non-Von Neumann architecture, and it simulates the structure and working principle of the human brain. Compared with non-Von Neumann architecture AI chips, the neuromorphic chips have significant improvement of efficiency and energy consumption advantages.
Yang-Yang Chen +3 more
openaire +1 more source
Analysis of HBM Failure in 3D NAND Flash Memory
Electronics, 2022 Electrostatic discharge (ESD) events are the main factors impacting the reliability of NAND Flash memory. The behavior of human body model (HBM) failure and the corresponding physical mechanism of 3D NAND Flash memory are investigated in this paper. A catastrophic burn-out failure during HBM zapping is first presented. Analysis shows that NMOS fingers’
Biruo Song +6 more
openaire +1 more source
First Evidence of Temporary Read Errors in TLC 3D-NAND Flash Memories Exiting From an Idle State
IEEE Journal of the Electron Devices Society, 2020 This paper presents a new reliability threat that affects 3D-NAND Flash memories when a read operation is performed exiting from an idle state. In particular, a temporary large increase of the fail bits count is reported for the layers read as first ...
Cristian Zambelli +3 more
doaj +1 more source
DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability [PDF]
, 2017 To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Mittal, Sparsh +2 more
core +3 more sources
Novel Pattern-Centric Solution for XtackingTM AFM Metrology
Journal of Microelectronic Manufacturing, 2019 3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang +6 more
doaj +1 more source