Results 31 to 40 of about 2,113 (167)

Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation

, 2008
In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations.
Furnemont A., G. Giusi, G. Iannaccone, Hagenbeck R., Han Z., Lin H., Lombardo S., Ohkura Y., Pang H., Razafmdramora J., U. Ravaioli, Vianello E., Yih C. M.   +12 more
core   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage

IEEE Journal of the Electron Devices Society
In this two-part article we discuss the difference between a continuous and a discrete approach to trap modeling in the simulation of 3-D NAND Flash memories with polysilicon channel. In Part I we focus on threshold voltage $({\mathrm { V}}_{\mathrm { T}
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli   +9 more
doaj   +1 more source

Hardware‐Based On‐Chip Learning Using a Ferroelectric AND‐Type Array With Random Synaptic Weights

Advanced Intelligent Systems, EarlyView.
This work demonstrates an energy‐efficient on‐chip learning system using an Metal‐Ferroelectric‐Insulator‐Semiconductor FeAND synaptic array. By employing a feedback alignment scheme with a separate backward array using fixed random weights, the system overcomes directional limitations of AND‐type arrays and achieves robust, low‐power learning suitable
Minsuk Song, Changhyeon Han, Joonhyeok Choi, Jongwoo Lee, Hyun‐min Kim, Wongi Hong, Ujin Kim, Sung‐Tae Lee, Daewoong Kwon   +8 more
wiley   +1 more source

Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines [PDF]

, 2010
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems.
Derek Abbott, Kamran Eshraghian, Kyoung-rok Cho, Omid Kavehei, Soon-ku Kang, Student Member, Sung-mo Steve Kang   +6 more
core  

Duality between erasures and defects

, 2016
We investigate the duality of the binary erasure channel (BEC) and the binary defect channel (BDC). This duality holds for channel capacities, capacity achieving schemes, minimum distances, and upper bounds on the probability of failure to retrieve the ...
Kim, Yongjune, Kumar, B. V. K. Vijaya
core   +1 more source

Keggin‐Type Aluminum Polyoxometalate‐Mediated Oxidation of Amorphous Carbon for Engineered Electrochemical Interfaces

Carbon Energy, EarlyView.
Keggin‐type Al‐POM‐coated silica achieves selective surface oxidation of amorphous carbon through electrostatic attraction and proton‐coupled oxidation, tailoring interfacial properties for lithium‐ion batteries and semiconductor processes. ABSTRACT Amorphous carbon is widely used in energy storage and semiconductor technologies, where surface ...
Ganggyu Lee, Dongmin Kang, Sumin Hong, Hongjun Park, Myungju Woo, Woojin Jeong, Giha Lee, Junsang Lee, Sangkyun Kim, Jea‐Gun Park, Takamasa Mori, Yehwan Kim, Taeseup Song, Ungyu Paik   +13 more
wiley   +1 more source

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +1 more source

Analysis and Comparation of SSD and HDD Technologies [PDF]

, 2015
Import 22/07/2015Jedním z faktorů, který limituje efektivní činnost počítačové jednotky, je výkonnost její klíčové součásti – pevného disku (hardwaru). Proto se výzkum v oblasti informačních technologií soustřeďuje na problematiku kapacity, rychlosti a ...
Hansel, Lukáš
core  

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source