Results 51 to 60 of about 2,113 (167)
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source
Small, Volume 22, Issue 14, 6 March 2026.A universal temperature‐friendly nonvolatile MRAM (UTF‐NVMRAM) operating from 4 to 400K is realized by optimizing the MgO/MgOx capping layer and incorporating Mo into the CoFeB composite‐free layer. This architecture minimizes temperature sensitivity in switching voltage and thermal stability factor while demonstrating potential CMOS back‐end‐of‐line ...
Ming‐Chun Hong +21 more
wiley +1 more source
FlashAbacus: A Self-Governing Flash-Based Accelerator for Low-Power Systems
, 2018 Energy efficiency and computing flexibility are some of the primary design constraints of heterogeneous computing. In this paper, we present FlashAbacus, a data-processing accelerator that self-governs heterogeneous kernel executions and data storage ...
Jung, Myoungsoo, Zhang, Jie
core +1 more source
Vertical Self‐Rectifying Memristive Arrays for Page‐Wise Parallel Logic and Arithmetic Processing
Advanced Materials, Volume 38, Issue 8, 6 February 2026.This study proposes a page‐wise logic‐in‐memory architecture realized in a 3D vertical resistvie random‐access memory array of self‐rectifying memristors. By introducing intra‐ and inter‐page logic primitives, the system enables Boolean and arithmetic operations to be executed directly within the memory.
Kunhee Son +12 more
wiley +1 more source
Advanced Intelligent Systems, Volume 8, Issue 2, February 2026.This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze +8 more
wiley +1 more source
Phase-change technologies: from PCRAM to probe-storage to processors [PDF]
, 2013 Phase-change materials based on chalcogenide alloys, for example GeSbTe and AgInSbTe, show remarkable properties such as: the ability to be crystallized by pulses in the (hundreds of) femtoseconds region while at the same time withstanding spontaneous ...
Ashawaraya, S. +10 more
core
Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory [PDF]
We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode.
Chen, Dakai +6 more
core +1 more source
Methods for Threshold Voltage Setting of String Select Transistors in Channel Stacked NAND Flash Memory [PDF]
, 2017 학위논문 (박사)-- 서울대학교 대학원 공과대학 전기·컴퓨터공학부, 2017. 8. 박병국.Since recent mobile electronic devices such as tablets, laptops, smartphones, or solid-state drives (SSDs) have started to adopt the NAND flash memory as their main data storage device, the demand for ...
김도빈
core
NASA Electronic Parts and Packaging (NEPP) Program Plans [PDF]
This presentation provides an overview of the NEPP ...
Label, Kenneth A., Sampson, Michael J.
core +1 more source