CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory. [PDF]
Kim MK, Kim IJ, Lee JS.
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Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices. [PDF]
Lee Y +5 more
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Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference. [PDF]
Yi SI, Kim J.
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Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices. [PDF]
Kim S, Seo J, Choi J, Yoo H.
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Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System. [PDF]
Ju D, Kim S, Kim S.
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Research progress in architecture and application of RRAM with computing-in-memory. [PDF]
Wang C +5 more
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Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]
Fernandes L +20 more
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Advancing the Frontiers of HfO<sub>2</sub>-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]
Zhou Z +9 more
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Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional nand Flash Memories. [PDF]
Refaldi DG +4 more
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Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]
Hwang H, Youn S, Kim H.
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