Results 41 to 50 of about 2,113 (167)
Advanced Functional Materials, Volume 36, Issue 29, 9 April 2026.Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim +3 more
wiley +1 more source
A Behavioral Compact Model of 3D NAND Flash Memory
, 2018 We present a behavioral compact model of 3D NAND flash memory for integrated circuits and system-level applications. This model is easy to implement, computationally efficient, fast, accurate and effectively accounts for the different parasitic capacitance coupling effects applicable to the 3D geometry of the vertical channel Macaroni body charge-trap ...
Sahay, Shubham, Strukov, Dmitri
openaire +2 more sources
Advanced Electronic Materials, Volume 12, Issue 7, 6 April 2026.This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan +21 more
wiley +1 more source
Flexible Memory: Progress, Challenges, and Opportunities
Advanced Intelligent Discovery, Volume 2, Issue 2, April 2026.Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source
, 2018 Encryption is a useful tool to protect data confidentiality. Yet it is still challenging to hide the very presence of encrypted, secret data from a powerful adversary.
Zuck, Aviad +4 more
core
Advanced Intelligent Systems, Volume 8, Issue 4, April 2026.Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang +4 more
wiley +1 more source
Emerging single‐element ferroelectrics: From theory to experiment
InfoMat, Volume 8, Issue 4, April 2026.This review explores recent developments in single‐element ferroelectrics, covering mechanisms of ferroelectric behavior, their crystal structures, key preparation methods, ferroelectric performance characteristics, and promising device applications in field‐effect transistors, photodetectors, and visual perceptrons.
Run Zhao +7 more
wiley +1 more source
Rare Metals, Volume 45, Issue 4, April 2026.ABSTRACT Hafnium oxide (HfO2) nanoparticles (NPs), derived from a rare‐metal element, have gained increasing attention as a versatile class of functional nanostructures with unique optical, dielectric, and surface properties that enable diverse biomedical applications. As a representative rare‐metal oxide, HfO2 NPs with well‐defined architectures offer
Mothana Hussein Tarawneh +8 more
wiley +1 more source
Advanced Functional Materials, Volume 36, Issue 23, 19 March 2026.This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim +7 more
wiley +1 more source