Results 71 to 80 of about 2,098 (165)

Resistive Switching Characteristics of Alloyed AlSiO_x Insulator for Neuromorphic Devices. [PDF]

Materials (Basel), 2022
Lee Y, Jang J, Jeon B, Lee K, Chung D, Kim S.   +5 more
europepmc   +1 more source

Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference. [PDF]

Micromachines (Basel), 2021
Yi SI, Kim J.
europepmc   +1 more source

Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices. [PDF]

Nanomicro Lett, 2022
Kim S, Seo J, Choi J, Yoo H.
europepmc   +1 more source

Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System. [PDF]

Nanomaterials (Basel), 2023
Ju D, Kim S, Kim S.
europepmc   +1 more source

Research progress in architecture and application of RRAM with computing-in-memory. [PDF]

Nanoscale Adv, 2023
Wang C, Shi G, Qiao F, Lin R, Wu S, Hu Z.   +5 more
europepmc   +1 more source

Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]

Nano Converg
Hwang H, Youn S, Kim H.
europepmc   +1 more source

Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional nand Flash Memories. [PDF]

Micromachines (Basel)
Refaldi DG, Malavena G, Chiavarone L, Spinelli AS, Monzio Compagnoni C.   +4 more
europepmc   +1 more source

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO₂/Al₂O₃-Based Charge Trapping Layers. [PDF]

Materials (Basel), 2022
Spassov D, Paskaleva A, Guziewicz E, Wozniak W, Stanchev T, Ivanov T, Wojewoda-Budka J, Janusz-Skuza M.   +7 more
europepmc   +1 more source

Modeling methodology for thermo-structural analysis of V-NAND flash memory structure. [PDF]

Sci Rep
Kim Y, Ryu S, Lee S.
europepmc   +1 more source

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO₂/Al₂O₃ Nanolaminated Stacks. [PDF]

Nanomaterials (Basel), 2023
Spassov D, Paskaleva A.
europepmc   +1 more source